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A Comprehensive Review on Phase Shifters:Topologies, Types, Comparative Studies, Liquid Metal Phase Shifters, and Future Directions

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17 November 2024

Posted:

19 November 2024

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Abstract

RF signals are widely used in various applications such as telecommunications, wireless communication systems, and radar systems. These signals can be manipulated using phase shifters that adjust the signal's phase. This adjustment is essential for beam shaping, signal cancellation, and frequency synthesis in antenna arrays. By controlling the phase of the RF signal, phase shifters help manipulate electromagnetic waves for various applications. Therefore, as Gallo points out, phase shifters are essential for manipulating and controlling high-frequency signals. This manipulation and control is essential to improving the performance of wireless communication and radar systems and can improve signal reception and transmission.The study examines different types of phase shifters, conducts a comparative analysis of different phase shifter topologies and technologies, and highlights their respective advantages and limitations in applications. In addition, the review includes a specific study of liquid metal phase shifters. Finally, the article outlines future research directions for liquid metal phase shifters, It emphasizes the need for innovative design strategies to keep pace with the evolving wireless communications and telecommunications fields. Therefore, this article can serve as a reference for the milestones in RF phase shifter research.

Keywords: 
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1. Introduction

Phase shifters are essential components in various microwave system designs and applications [1] such as phase modulators, harmonic distortion suppression, beamforming [2], etc. The most popular application of phase shifters is beamforming using antenna arrays in phased array platforms. Beamforming is very important for improving the link performance of wireless communication systems. In addition, beamforming networks are now widely used in advanced radar systems and evolving 5G communication systems. Beam shaping can be done in the digital, optical, or analog domains [3]. Very flexible beamforming can be done digitally by adjusting the time delay using an analog-to-digital converter (ADC). However, a major drawback of digital beamforming techniques is the high cost, increased system complexity, and loss of applications such as the massive MIMO with a large number of antennas [4]. However, the main distinction is between passive and active designs. Passive phase shifters include all classes of phase shifters that consume no power when inactive. However, they may consume power when needed to change the phase shift set point using, for example, MOSFET transistors. But these components use very little power when they are in idle mode. Active phase shifters, on the other hand, are implemented using high-current circuits such as variable gain amplifiers or Gilbert cells. The trade-off for high linearity achieved with passive phase shifters is high insertion loss, noise figure (NF), and large on-chip space requirements.
On the other hand, active phase shifters decrease linearity but increase compactness, minimize losses (and possibly even increase gains), and adjust gains. This reduces the workload for the VGPA in correcting signal losses and padding the data. [5].
Phase shifters need to be small in size, inexpensive, and have little insertion loss within the intended bandwidth. Due to space limits, phase shifter size is an important element, particularly in the design of portable microwave devices. However, the development of high-resolution RF phase shifters accounts for about 50 % of the total system cost and remains a challenge in realizing compact phased array beamformers [6]. Since the performance of a phase shifter mainly depends on its technology, this paper studies various topologies/types of phase shifters based on their phase tuning mechanisms and techniques, focusing on their advantages/limitations and the state-of-the-art techniques to overcome their disadvantages also focus in the liquid metal phase shifters.

2. Methodology

This section focuses on the experimental characterization of phase shifts and the principles of phase shifters. Further details are explained below:

2.1. Phase Shift’s Experimental Characterization

To determine the phase shift, you can place the shifter in an unbalanced Mach-Zehnder Interferometer (MZI) or ring resonator. The phase shift value can be obtained from the MZI optical transmission spectrum by applying DC voltages with different amplitudes [7]:
Δ φ = | λ ( V 0 ) λ ( V ) | F S R
where λ ( V 0 ) is one of the MZI spectrum drop wavelengths in the initial state without applied voltage, λ ( V ) is the same MZI spectrum drop wavelength as the applied voltage, and FSR is the free spectral range of the MZI spectrum. The unit of Δ φ is 2 π .
The n e f f can be determined by tuning the resonance wavelength of a ring resonator [8] :
Δ n e f f = Δ λ r e s s . m L , m = 1 , 2 , 3 . . .
where Δ λ r e s s is the resonance wavelength tuning and L is the round-trip length.

2.2. The principle of phase shift

A PAS’s fundamental component is an RF phase shifter. Through a control element, it is used to alter the input signal’s transmission phase. This can be accomplished either actively or passively. Thus, both active and passive phase shifters are available. Phase shifters are employed in many different applications outside PASs, such as image rejection receivers [9], linearization of amplifiers [10], and electrical testing devices like signal generators [11]. Changing the phase of an incoming signal without altering other parameters like strength and frequency is the main function of a phase shifter. Accordingly, an ideal reciprocal phase shifter with Φ phase shift has the following scattering matrix:
S = 0 e j φ e j φ 0
Even though ideal phase shifters only change the signal phase, as demonstrated by equation 3, practical RF phase shifters suffer from performance degradation. Several parameters can determine the performance of an RF phase shifter, including the frequency capability/bandwidth, insertion loss, return loss, linearity, power handling, phase range/resolution, phase error, chip area, and power consumption .

2.2.1. Frequency Capability and Bandwidth

The bandwidth of RF phase shifters should be B W = f H f L , where f H and f L are the upper and lower cutoff frequencies, respectively, and they should function at a center frequency ( f 0 ). A common name for the bandwidth is the 3-dB bandwidth. The frequency range where the reflection coefficients (S11,S22) are less than -10 dB; however, maybe referred to as the bandwidth of viable RF phase shifters. The percentage of the bandwidth with regard to the center frequency is known as fractional bandwidth (FBW), and it is commonly expressed as F B W = f 0 B W 100 . Operating at high frequencies with the phase shifter frequently desires a wide bandwidth. However, because of the decline in the quality factor and performance of passive and active parts at higher gigahertz frequencies, designing high frequency and big bandwidth phase shifters is difficult [12].

2.2.2. Insertion and Return Losses

The insertion loss (IL), which is equal to the negative of S 21 in decibels (dB), is the energy loss of the transmission mode RF phase shifter when the signal moves from the input to the output ( I L = 20 log | S 21 | Moreover, it indicates the gain of the phase shifter. Gain imbalance is the phrase used to describe the variance in gain over the bandwidth, which ought to be as small as feasible. Compared to their active counterparts, passive phase shifters result in higher insertion loss. Additionally, an RF phase shifter’s insertion loss usually rises with frequency. In contrast, the energy loss resulting from an incoming signal being reflected at the device’s input or output is measured by the return loss (RL). S 11 ( R L i n = 20 log | S 11 | ) measures the input return loss, whereas S 22 ( R L o u t = 20 log | S 22 | ) measures the output return loss. Low insertion loss and high return loss are requirements for phase shifters.

2.2.3. Linearity

Linearity serves as a crucial parameter in the design of RF phase shifters. To prevent intermodulation effects and subsequent challenges in signal demodulation on the receiver end, it is essential that the output power level changes consistently in relation to the input power. Similar to amplifiers, the linearity of an RF phase shifter is typically evaluated using its third intercept point ( I P 3 ) , which can refer to either the input (IIP3) or the output (OIP3). Naturally, passive phase shifters exhibit greater linearity compared to their active counterparts, which incorporate active devices that are fundamentally non-linear [12].

2.2.4. Resolution and Phase Range

According to Equation 4, the phase range is the phase difference between the reference phase ( φ r e f ) and the greatest achievable phase shift ( φ m a x ) [6]:
φ r a n g e = φ m a x φ r e f
The reference value can be subtracted from the actual phase shift to normalize the phase state φ :
Φ = φ φ r e f
In this context, the phase shifter’s reference value is set to 0°, and the phase range ( φ = ϕ m a x ) determines the maximum normalized phase shift. A phase shifter’s resolution is the smallest phase shift value that separates two successive phase states. Resolution is a helpful characteristic, especially for digital phase shifters or phase shifters with digital phase control. It is expressed as follows and depends on the number of bits N of the bit control or DAC [6]:
φ r e s o l = Φ m a x 2 N
With a 2-bit phase shifter, the resolution is resol Φ r e s o l = 90 ° , and the potential phase states are Φ 1 = 90 ° , Φ 2 = 180 ° , Φ 3 = 270 ° , a n d Φ 4 = 360 ° . The phase range max is 360°. The number of control bits is occasionally used to express the resolution. The resolution of many useful digital phase shifters can reach up to 8 bits, and their phase range is 360°. Analog phase shifters rely on the constant analog control voltage to determine their resolution, whereas digital phase shifters have a limited resolution [13] .

2.2.5. Power Handling

For phase shifters, power handling is an essential parameter, particularly in high-power applications like satellite communications and radar systems. It describes the highest RF power that a phase shifter can withstand without suffering physical harm or appreciable performance deterioration.Due to transistors’ limited P 1dB, passive phase shifters are better at handling power than active phase shifters [6].

2.2.6. Amplitude and Phase Errors

The difference between the desired and measured actual phase shifts is known as the RF phase shifter’s phase error. This is how it is expressed [14]:
ϵ φ = Φ Φ 0
where the measured and desired phase states are denoted by Φ and Φ 0 , respectively. The accuracy of the phase shifter is frequently assessed using the root mean square (RMS) phase error. The RMS of the actual phase faults at every potential phase shift is used to obtain it.

2.2.7. Surface area

Phase shifter size is a crucial factor that needs to be kept within reasonable bounds. Due to the fact that RF phase shifters typically use inductors that take up a lot of space, they are frequently very big. Area consumption for passive phase shifters is primarily determined by frequency, process technology, and resolution/phase range. They show larger regions at lower operating frequencies and higher phase resolution [6]. In contrast, active phase shifters often take up less space than their passive counterparts because they use area-effective blocks like attenuators and active blocks like amplifiers for phase tuning [6].

2.2.8. Power Consumption

Like other radio frequency modules, phase shifters should have low to no DC power consumption. However, a lot of active phase shifters conduct phase adjustment using VGAs, result in respectable DC power usage.Amplification is also necessary for certain phase shifters to increase the signal’s strength and quality. Consequently, the amount of DC power used rises. In contrast, digital phase shifters usually use very little DC power because they mostly use passive components such capacitors and inductors, which don’t need voltage consuming.
RF phase shifters are classified in a variety of ways. There are mechanical, ferromagnetic/magnetic, micro-electromechanical systems (MEMS), and electronic phase shifters that are based on the phase tuning mechanism. The components or building blocks of RF phase shifters are used to classify them as either passive or active. Additionally, depending on the control voltage, phase shifters can be either digital or analog, but this usually refers to electronic phase shifters [6]. The next section describes the types of phase shifters and their topologies.

4. Comparative Studies

In literature, phase shifters are categorized as active phase shifters and passive phase shifters. The advantages and limitations of both are compared in Table 1.
The use of passive phase shifters is often restricted to Ku-band and lower due to a number of drawbacks, such as high insertion loss, large size, and narrow bandwidth [53]. Active phase shifters, on the other hand, solve these problems by offering a smaller chip area and a larger gain.
Table 2, compare various topologies currently used to implement phase shifters.
Table 3 presents the authors’ summary of the various electronic phase shifters’ performances [51]. Passive phase shifters, primarily STPS, RTPS, and LLPS, are more linear, have a higher power handling capacity, and use less power than active ones. On the other hand, compared to passive phase shifters, VSPS provide a comparatively larger bandwidth, greater gain, and a smaller chip area. Except for STPS, which is a digital phase shifter, most passive and active electronic phase shifters can be adjusted to provide continuous or discrete resolution. Much recent research has focused on the MEMS solution in an effort to achieve respectable performance regarding power capability, bandwidth, insertion loss, and chip area.
Table 4 shows the benefits and limitations of each type of phase shifter.
Much of this study focuses on the advantages of liquid metal characteristics. While liquid metals, such as mercury, have existed and been used since 1500 BC [51], gallium was not discovered until the 19th century, and it and its alloys were not discovered as mercury substitutes until the 20th century. A summary of the properties of liquid metals based on mercury and gallium is provided.
Mercury: Mercury has been discovered in Egyptian tombs dating back to 1500 BC [62], Mexican pyramids from 1800 years ago, and ancient Chinese and Tibetan histories [51]. While it is impossible to identify exactly what it was used for back then, it has modern applications in dentistry, lighting, gauges, mining, and electronics, to mention a few.
Gallium: Gallium is not a liquid metal at ambient temperature, like mercury, but its melting point is low enough (29.76 °C [85.58 °F]) to melt in a human hand and refreeze when removed [63]. When combined with other metals, some gallium alloys can have melting points as low as -19 °C (-2 °F) [63,63]. Since its discovery in 1875, gallium arsenide (GaAs) and gallium nitride (GaN) have been widely employed in electronics, particularly semiconductors. However, due to their non-toxicity, gallium liquid metal alloys have lately been employed as a replacement metal for a variety of mercury applications, including the thermometer [64].
Table 5 compares the properties of gallium, EGaIn, Galinstan®, and generic Galinstan, which includes mercury.
Table 6 presents a detailed analysis of the performance demonstrated by the liquid metal (LM) phase shifter compared to many state-of-the-art LM phase shifters and alternative technologies operating at a frequency of 10 GHz. In [62] The suggested LM phase shifters provide low IL and RMS amplitude changes (<1.5 dB in all states). The proposed phase shifters have a better (i.e. lower) IL performance than any other state-of-the-art phase shifters that enable a phase shift of up to 360°. The suggested phase shifters provide exceptional FoM performance of 131.3 and 122.4 °/dB at 10 GHz. This FoM is much greater (i.e., better) than all cutting-edge phase shifters, regardless of the technology utilized. Furthermore, the proposed phase shifters are built on SIW technology and fed by SMA connectors. The proposed phase shifters can handle approximately high amounts of RF power. The proposed work of LM phase shifters[76] achieves low IL and RMS amplitude changes (<1.5 dB across all states). The proposed phase shifters have superior (i.e. lower) IL performance than all state-of-the-art phase shifters with a phase shift of up to 360°. This allows the suggested phase shifters to achieve remarkable FoM performance of 131.3 °/dB and 122.4 °/dB at 10 GHz. This FoM is much higher (i.e. superior) than all cutting-edge phase shifters, regardless of the technology utilized. Furthermore, the proposed phase shifters are built on SIW technology and fed via SMA connectors. The proposed phase shifters can handle high amounts of RF power.

5. Applications

Phase shifters, as one of the most significant devices, play an important role in the development of reconfigurable PICs. Many high-performance reconfigurable devices based on phase shifters have been proposed, such as modulators [39,89], optical filters [90,91], and tunable delay lines [92]. In addition, efficient phase shifters with a low power consumption and high modulation speed pave the way for large-scale neuromorphic computing systems, photonic accelerators, optical phased arrays, on-chip spectrometers, etc. In this section, we will introduce the phase shifter-based reconfigurable According to the literature we find :
  • Advanced Optical Computing Systems: Traditional computers built on the von Neumann architecture, which physically divides the processing module from the storage module, are encountering speed and integration density limits in the post-Moore era. To overcome Moore’s Law’s constraints, many scientists started investigating the upcoming generation of computer architectures and presented some intriguing computing platforms. we find two types:
    -
    Neuromorphic Computing System
    -
    Photonic Accelerator
  • Optical Phased Array: Over the past 20 years, the optical phased array has advanced quickly, influenced by array radars in electronics. Thanks to its accurate and adjustable steering angle of emitted light, OPAs have emerged as a strong contender for spatially resolved optical sensors, LiDAR mapping, and optical communication in free space. Typically, an incident light coupler, a phase shifter array, and grating emitters make up an OPA.
  • Multi-Functional Signal Processing Systems: Perez et al. proposed a hexagonal mesh structure inspired by FPGAs in the field of electronics [93]. This structure has a phase shifter on each side of the hexagon, enabling a particularly large number of functions, including ring-loaded MZIs, optical ring resonators, coupler resonator waveguides, side-coupler integrated spaced sequences of optical resonators, and single-input/single-output FIR filters. The photonic integrated circuits’ functionality and scalability are significantly enhanced by the architectures.
  • On-Chip Spectrometer: In laboratories and industry today, spectrometers are crucial instruments for calibration and measurement. Spectrometers are currently trending towards downsizing, and researchers have made significant efforts in this respect, even though bulky, contemporary spectrometers are capable of high-resolution observations [94,95]. The spectrometer application may be made possible by the integrated phase shifters’ on-chip light splitting and routing capabilities, which produce on-chip light interference.

7. Conclusions

This detailed review offers a thorough analysis of phase shifters, with a specific focus on liquid metal phase shifters. It includes performance comparisons and discusses future directions in this field. The review identifies critical challenges faced by liquid metal phase shifters, considers size considerations and architecture, and covers a wide range of frequency bands to enhance overall performance. The review suggests that future research could focus on improving and advancing liquid metal phase shifters, potentially through miniaturization to increase their potential applications. Additionally, a smaller phase shifter would be easier to handle and adjust when tuning the phase shift. The review emphasizes the importance of assessing multiple performance metrics. it serves as a valuable resource for researchers and engineers involved in the design of liquid metal phase shifters for various applications. It also highlights key challenges and future directions in this field.Hence, to lower the overall cost of phased array systems for wireless 5G communication systems, future work will involve building appropriate feeding networks that require less complicated fabrication procedures and implementing phase shifters with minimal phase errors and loss utilizing cost-effective technologies.

Notes

1
Insertion Loss
2
Return Loss
3
Single-Unit Two-Bit Reflection-Type Phase Shifters
4
Switched-Type Phase Shifters
5
Reflective-Type Phase Shifters
6
Loaded-Transmission Line Phase Shifters
7
Vector-Sum Phase Shifters
8
Root Mean Square

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Figure 1. block diagram of the application of a phase shifter
Figure 1. block diagram of the application of a phase shifter
Preprints 139948 g001
Table 1. Comparison between active and passive phase shifters
Table 1. Comparison between active and passive phase shifters
Types Benefits Limits References
Active phase shifters -Lower insertion losses
- Architecture simple
-Compact geometry
-Low cost for silicon surface area.
-Their DC consumption is higher
- The linearity is degraded
- The transmission power is limited
[5,52]
Passive phase shifters - Reduces DC consumption
- Improves linearity.
-The circuits are less compact.
Insertion losses are higher
Table 2. Comparison between different phase shifter topologies
Table 2. Comparison between different phase shifter topologies
Reference Shift Method Control Type Frequency(GHz) IL 1(dB) RL2(dB) Δ φ (°)
[54] Switched line Digital 13-18 2.7 22 349.3
[55] Reflection type Analogue 2 1 13.4 385
[56] Network type Digital 0.5-1 2.5 13 360
[2] Loaded transmission line Analogue 1 2 15 183
[57] GFET CS Amplifier Digital 3 -2.5 0.9 197.9
[57] GFET CS Amplifier Analogue 3 0 0.4 84.5
[32] RTPS Digital 1.37-1.43 2.3 >15 180
[58] Schiffman Digital 1.5-6 1.2 > 10 323
[59] Inverted-E Digital 0.4-4 0.46-1.8 > 12->15 100
[60] SUTBRTPSs3/single-unit - 0.9-1.1 2.1 > 19 180
Table 3. Comparison of electronic phase shifters
Table 3. Comparison of electronic phase shifters
Performance STPS 4 RTPS 5 LLPS 6 VSPS 7
Bandwidth Narrow Narrow Narrow Wide
Passive/Active Passive Passive Passive Active
Phase control Digital Analog/Digital Analog/Digital Analog/Digital
Power consumption Low Low Low High
Chip area Large Large Large small
Linearity High High High Limited
Output power High High High Low to medium
Insertion loss High High High Low
Return loss Medium High Low High
Table 4. Comparative analysis of phase shifter types
Table 4. Comparative analysis of phase shifter types
References Phase Shifters Type Benefits Limits
[54,55,60] Ferrites -High power-handling capacity
-Decent reliability
-Radiation tolerance
-Suitability for high-power applications
-They are bulky
-less integratable
-Slow in response (requiring long
tuning times)
-Expensive (not suitable for
mass production)
-Significant power consumption
[57,58] p-i-n diodes, Varactors -Offers continuous tunability of
the output phase
-maintains satisfactory isolation
and reflection coefficients
-Simple, easy to manufacture
-Low cost
-Limited phase-shift
resolution
- Unacceptably high losses
in the millimetre-wave band
[59,60] MEMS -Significantly lower insertion loss
-Higher linearity over wide bandwidth
-Lower power consumption compared to
semiconductor technologies
-Still limited by the maximum
operational frequency
-Reliability issues
[58,59] Tunable Dielectrics Methods -Easy implementation and control.
-Low insertion
-High phase resolution
-High tunability
-Small phase deviation with frequency
and linear phase tuning.
-complex configurations
-Expensive
-High power consumption
[61,62] Liquid crystal (LC) materials -low insertion loss (IL) at higher
frequencies.
-They offer a wide phase tuning range
-High phase resolution
-The phase shifting range of
some LC-based designs is limited
-Slower switching speed
compared to semiconductor-
based solutions .
Table 5. Comparative Properties of Liquid Metals.
Table 5. Comparative Properties of Liquid Metals.
Property Mercury Gallium EGaIn
(Ga 75%, In
25%)
Galinstan® Generic
galinstan
(Ga 68.5%,
In 21.5%,
Sn 10%)
Color Silver [65] Silver [66] Silver Silver [67] Silver
Odor Odorless [68] Odorless Odorless Odorless [66] Odorless
Toxicity Hight Low Low Low Low
Boiling
point
356.73 °C [40,65] 2204 °C [67] Estimated similar
to Galinstan®
>1300 °C [67] Similar to
Galinstan®
Melting
point
-38.83 °C [65,67] 29.76 °C [66,69,70] ∼15.5 °C [69] -19 °C [67,71] 11 °C [72],
[64]
Density 13.534 g/cm3
[65]
5.904 g/cm3
[66]
6.2275 g/cm3
[73]
6.44 g/cm3
[67]
6.44 g/cm3
[64,66]
Solubility Insoluble [68] Insoluble Insoluble Insoluble [66] Insoluble
Viscosity 1.526 x 10-3 Pa·s
@ 25 °C [64]
1.921 x 10-3
Pa·s @ 50 °C
[64]
1.99 x 10-3 Pa·s
[73]
2.4 x 10-3 Pa·s [63] ∼2.25 x 10-3
Pa·S @ 25 °C
[74]
Thermal
conductivity
8.541 W/(m·K)
[64]
8.3 W/(m·K) [65]
29 W/(m·K)
[66]
26.43 W/(m·K)
[74]
16.5 W/(m·K) [63] ∼25.41
W/(m·K) [66]
Electrical
conductivity
1.04 x 106 S/m
[65]
7.1 x 106 S/m
[66]
3.46 x 106 S/m
[71]
3.4 x 106 S/m [63]
2.299 x 106 S/m [63]
3.83 ± 0.16 x 106 S/m
@ 3-20 GHz
3.46 x 106 S/m
[68]
Surface
tension
>0.4 N/m [71] >0.5 N/m
[75]
>0.5 N/m [75]
∼0.624 N/m [70]
∼0.435 N/m
w/ HCl [71]
>0.5 N/m [75]
534 ± 10.7 mN/m
[75]
0.718 N/m
@ 20 °C [66]
Table 6. Performance comparison between the different Liquid metal phase shifters and other alternative phase shifters
Table 6. Performance comparison between the different Liquid metal phase shifters and other alternative phase shifters
Reference Technology Phase shifting(°) IL(dB) FoM(°/dB) Resolution(°) RMS 8 phase error(°) RMS amplitude error(dB) Size(mm)
[76] Liquid Metal 367.6 <2.8 13.3 ≈ 45 20 <1.5 57.2*14
[77] Liquid Metal 180 2.3 78.3 10 10 NA 87.2*56.2
[78] Liquid Metal(Non Uniform) 367.6 <2.8 131.3 ≈ 45 20 <1.5 57.2*14
[78] Liquid Metal(Uniform) 379.5 <3.1 122.4 ≈ 45 20 <1.5 57.2*14
[79] Ferroelectric based 413 10.3 40.1 NA NA >3 3.8*2.3
[80] Ferrite-LTCCC 215 <7 48 NA NA NA ≈ 45*45
[81] Liquid Crystal ≈ 60 2.5 24 NA NA NA NA
[82] Liquid Crystal ≈ 101 ≈ 5 15.2 NA NA NA NA
[83] Liquid Crystal 461 4.35 105.9 NA NA NA NA
[84] GaN 180 14 12.8 11.25 4.5 ≈ 0.6 4.7*5
[85] 0.25 µm SiGe BiCMOS 360 <12 <30 11.25 6.4 >3.0 1.87*0.88
[86] 0.13 µm CMOS 360 27.3 5.625 4.1 ≈ 0.8 2.06 × 0.58
[87] 0.18 µm SiGe BiCMOS 360 11.9 30.25 5.625 4.6 ≈ 0.6 NA
[88] 0.25 µm SiGe BiCMOS 360 ≈ 13 27.7 5.625 4 ≈ 0.6 3.42 × 0.95
[88] PIN Diode-SIW <180 ≈ 2 ≈ 90 NA NA >0.8 NA
Table 7. Comparative Analysis of Liquid Metal phase shifters
Table 7. Comparative Analysis of Liquid Metal phase shifters
Ref. Liquid Metal Benefits Limits
1 Galinstan -Enable reversibility and reconfigurability of
the phase shifter.
-Provide a wide operating frequency range
suitable for various applications.
-Provide flexibility
-Efficient performance
-Limitation in the frequency range
-Nonlinearity
2 Galinstan R and EGaIn -Offers stretchability
-Ensures safety in handling and operation
-High performance
-Hight weight and sagging
-Air gaps
-Fabrication Complexity
3 Gallium -Reconfigurability: which combines the
advantages of planar antennas with
millimeter wave and Internet of Things
technologies.
-Wide Phase Shift Range.
-Low Insertion Loss.
-Reconfiguration speed.
-Fabrication Complexity.
-Reliability Issues.
-Performance Restrictions.
4 Gallium -Reconfigurability,Liquid metal can be easily
reconfigured.
-Wide Phase Shifting Range.
Low Insertion Loss.
-Compact Design.
- Have an impact on performance.
-Corrosion and Oxidation.
-Cost: expensive than using conventional
solid-state materials
5 Gallium -Wide range of phase shift (0° to 360°).
-Operation at 10 GHz with low insertion
losses, suitable for high-power RF applications.
-Exceptionally low insertion loss.
-Compact electrical footprint
-Differences between measured and
simulated phase responses
-The use of liquid metal into the SIW
framework has presented challenges
with dependability and longevity.
-Possible need for additional optimization
to resolve differences in performance
6 Galinstan EGaIN -Large Phase Tuning Ratio
-Low Insertion Loss
-Compact Design
-High Power Handling Capability
-Impact on RF Performance
-Size Considerations
-Fabrication Difficulties
-Integrity Maintenance
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