Physical and Technological Aspects of Laser Induced Damage of ZGP Single Crystals under Periodically-Pulsed Laser Irradiation at 2.1 μm
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Version 2 : Received: 22 November 2023 / Approved: 23 November 2023 / Online: 23 November 2023 (04:52:06 CET)
A peer-reviewed article of this Preprint also exists.
Yudin, N.Y.N.; Dyomin, V.; Gribenyukov, A.; Antipov, O.; Khudoley, A.; Kinyaevskiy, I.O.; Zinovev, M.; Podzyvalov, S.; Kuznetsov, V.; Slyunko, E.; Lysenko, A.; Kalsin, A.; Eranov, I.; Baalbaki, H. Physical and Technological Aspects of Laser-Induced Damage of ZGP Single Crystals under Periodically Pulsed Laser Irradiation at 2.1 μm. Photonics 2023, 10, 1364. Yudin, N.Y.N.; Dyomin, V.; Gribenyukov, A.; Antipov, O.; Khudoley, A.; Kinyaevskiy, I.O.; Zinovev, M.; Podzyvalov, S.; Kuznetsov, V.; Slyunko, E.; Lysenko, A.; Kalsin, A.; Eranov, I.; Baalbaki, H. Physical and Technological Aspects of Laser-Induced Damage of ZGP Single Crystals under Periodically Pulsed Laser Irradiation at 2.1 μm. Photonics 2023, 10, 1364.
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Commenter: Nikolay Yudin
Commenter's Conflict of Interests: Author
The reference 35th was added. We have added several references more.
: The superscript and subscript were changed.
There was the misprint in the caption of the Figure 17. The OPO efficiency was decreased at the pulse repetition rate larger than 25 kHz, due to decrease of the pump pulse fluence.
English of the paper was improved.
We have changed the text to avoid misunderstanding. The following sentences were added to the Introduction.
Lines 55-65:
“However, the prolonged operation of powerful OPOs and OPGs/OPAs based on ZGP is limited by the laser-induced damage (LID) of this material. In accordance with the results of numerous studies [31-48], the ZGP LID always occurred at the sample surface or in the sub-surface layer rather than in the bulk in samples subjected to the repetitively-pulsed nanosecond-pulse-width infrared radiation. A combination of factors associated with de-fects in the crystal structure in the sub-surface layer and the quality of polishing of the surface itself affects the LID. In this regard, the potential for practical use of the optical parametric devices in the mid-IR range is associated,
in particular, with the need to im-prove the methods of synthesis, growth, and processing of the working surfaces of the ZGP crystals in order to increase the LID threshold (LIDT).”
The ZGP samples N1 and N2 were grown under different technological conditions: the growth rate was 0.8 mm/h and 0.3 mm/h, the temperature gradient was 9.0 K/cm and 5.0 K/cm, for samples N1 and N2, respectively. The different growth parameters resulted in difference of the LIDT of the ZGP crystals.
This information was added to the text (Lines 165-167).
The following sentence was added to the text in order to explain the 2.1 um wavelength choose, Lines 152-154:
“The tests were done at the wavelength of 2097 nm due to the common use of the high-power repetitively pulsed Ho3+:YAG lasers as the pumping source of the ZGP-based mid-IR OPOs”.
Lines 48-51:
“These OPOs are pumped by the well-established Q-switched Ho3+:YAG lasers at 2.1 µm and are capable of high-efficiently generating at 3.5-5 µm with an average power of up to 160 W or pulse energy of up to 200 mJ at the pulse width of 10-60 ns and the repetition rate from a few Hz to 100 kHz [17-22]. Moreover, the Ho3+:YAG–laser pumped OPOs based on the ZnGeP2 crystals provide the highly efficient operations at wavelengths of 6-7 µm, 8.1-8.3 µm and 9-10 µm [23-26].”