Cho, S.I.; Park, H.K.; An, S.; Hong, S.J. Plasma Ion Bombardment Induced Heat Flux on the Wafer Surface in Inductively Coupled Plasma Reactive Ion Etch. Appl. Sci.2023, 13, 9533.
Cho, S.I.; Park, H.K.; An, S.; Hong, S.J. Plasma Ion Bombardment Induced Heat Flux on the Wafer Surface in Inductively Coupled Plasma Reactive Ion Etch. Appl. Sci. 2023, 13, 9533.
Cho, S.I.; Park, H.K.; An, S.; Hong, S.J. Plasma Ion Bombardment Induced Heat Flux on the Wafer Surface in Inductively Coupled Plasma Reactive Ion Etch. Appl. Sci.2023, 13, 9533.
Cho, S.I.; Park, H.K.; An, S.; Hong, S.J. Plasma Ion Bombardment Induced Heat Flux on the Wafer Surface in Inductively Coupled Plasma Reactive Ion Etch. Appl. Sci. 2023, 13, 9533.
Abstract
Plasma plays an important role in semiconductor processes. With the recent miniature and integration, the control of plasma became essential for the success in critical dimension of a few nanometers and etch narrow and deep holes with high aspect ratios. Recently, the etching process has reached physical limitations due to a significant increase in wafer surface temperature under the elevated amount of RF power, affecting not only the warpage phenomenon but also etching uniformity and etching profiles. Therefore, the plasma characteristics are identified using invasive single Langmuir probe (SLP) for wafer temperature diagnosis. Optical data is obtained through a non-invasive optical emission spectroscopy (OES) and the plasma parameters are derived to compare and verify with the SLP. Two variables, electron temperature and electron density, are substituted for the heat flux formula to derive the heat flux according to its location. Using a wafer-type temperature sensor, check the derived heat flux values and compare trends. Such studies are expected to be able to calculate heat flux values in real time, anticipate wafer temperatures, and solve existing problems.
Keywords
Plasma; Ion bombardment; Heat flux; Electron temperature; Electron density
Subject
Engineering, Electrical and Electronic Engineering
Copyright:
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