Park, H.-G.; Trinh, V.-S.; Lee, M.-K.; Lee, B.-H.; Na, K.-I.; Park, J.-D. A 32-GHz Eight-Way Power Amplifier MMIC in 150 nm GaN HEMT Technology. Electronics2023, 12, 3278.
Park, H.-G.; Trinh, V.-S.; Lee, M.-K.; Lee, B.-H.; Na, K.-I.; Park, J.-D. A 32-GHz Eight-Way Power Amplifier MMIC in 150 nm GaN HEMT Technology. Electronics 2023, 12, 3278.
Park, H.-G.; Trinh, V.-S.; Lee, M.-K.; Lee, B.-H.; Na, K.-I.; Park, J.-D. A 32-GHz Eight-Way Power Amplifier MMIC in 150 nm GaN HEMT Technology. Electronics2023, 12, 3278.
Park, H.-G.; Trinh, V.-S.; Lee, M.-K.; Lee, B.-H.; Na, K.-I.; Park, J.-D. A 32-GHz Eight-Way Power Amplifier MMIC in 150 nm GaN HEMT Technology. Electronics 2023, 12, 3278.
Abstract
This paper presents a 32 GHz high power amplifier (HPA) with a design strategy to achieve a high-power output with reliable operation for the Ka-band deep space satellite communication in 150 nm GaN HEMT technology. The presented Ka-band HPA employs a cascaded two-stage common source amplifier topology, and the output stage is comprised of an 8-way power combining network in current mode. The interstage matching network is designed with the bandpass configuration utilizing capacitors and transmission lines to provide better stability at the low-frequency regime. The implemented Ka-band HPA achieved a peak power gain of 7.3 dB at 32 GHz and a 3 dB bandwidth was 3.5 GHz between 31.3 and 34.8 GHz. The saturated output power at the peak power added efficiency (PAE) of 19.3% was 38.2 dBm, and the output 1 dB gain compression point (OP1dB) was 27.4 dBm in the measurement. The designed HPA consumes an area of 19.35 mm^2 including RF signal, and DC pads
Keywords
mm-wave; deep space exploration; satellite communication; power amplifier; GaN; HEMT
Subject
Engineering, Electrical and Electronic Engineering
Copyright:
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
