Transition From Screw Type to Edge Type Misfit Dislocations at InGaN/GaN Heterointerfaces

Quantong Li; Albert Minj; Yunzhi Ling; Changan Wang; Siliang He; Xiaoming Ge; Chenguang He; Chan Guo; Jiantai Wang; Yuan Bao; Zhuming Liu; Pierre Ruterana

doi:10.20944/preprints202305.1735.v1

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preprints.org > chemistry and materials science > materials science and technology > doi: 10.20944/preprints202305.1735.v1

Preprint Communication Version 1 Preserved in Portico This version is not peer-reviewed

Transition From Screw Type to Edge Type Misfit Dislocations at InGaN/GaN Heterointerfaces

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Version 1 : Received: 24 May 2023 / Approved: 25 May 2023 / Online: 25 May 2023 (04:37:06 CEST)

A peer-reviewed article of this Preprint also exists.

Li, Q.; Minj, A.; Ling, Y.; Wang, C.; He, S.; Ge, X.; He, C.; Guo, C.; Wang, J.; Bao, Y.; Liu, Z.; Ruterana, P. Transition from Screw-Type to Edge-Type Misfit Dislocations at InGaN/GaN Heterointerfaces. Crystals 2023, 13, 1027. Li, Q.; Minj, A.; Ling, Y.; Wang, C.; He, S.; Ge, X.; He, C.; Guo, C.; Wang, J.; Bao, Y.; Liu, Z.; Ruterana, P. Transition from Screw-Type to Edge-Type Misfit Dislocations at InGaN/GaN Heterointerfaces. Crystals 2023, 13, 1027.

Abstract

We have investigated the interfacial dislocations in InxGa1–xN/GaN (0 ≤ x ≤ 0.20) heterostructures using diffraction contrast analysis in a transmission electron microscopy. The analysis indicate that the structural properties of the interface dislocations depend on the indium composition. For lower indium composition up to x = 0.09, we observed that the screw-type dislocations and dislocation half loops occurred at the interface even though the former do not contributes toward elastic relaxation of the misfit strain in the InGaN layer. With the increase of indium composition (0.13 ≤ x ≤ 0.17), in addition to the network of screw-type dislocations, edge-type misfit dislocations were found generated with their density gradually increasing. For higher indium composition (0.18 ≤ x ≤ 0.20), all the interfacial dislocations are transformed into a network of straight misfit dislocations along the <10-10> directions leading to partially relaxation of the InGaN epilayer. The presence of dislocation half loops may be explained by slip on the basal plane, the formation of misfit dislocations are attributed to punch-out mechanism.

Keywords

InGaN/GaN heterostructures; transmission electron microscopy; indium composition; screw-type dislocations; edge-type misfit dislocations

Subject

Chemistry and Materials Science, Materials Science and Technology

Copyright: This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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