Version 1
: Received: 18 April 2023 / Approved: 19 April 2023 / Online: 19 April 2023 (02:38:32 CEST)
How to cite:
Duinong, M.; Rasmidi, R.; Chee, F.P.; Salleh, S.; Rumaling, M.I.; Juhim, F.; Abdul Rani, A.I.; Chang, J.H.W. Finite Element Analysis of Radiation Effects on Metal Oxide based Semiconductor (MOS) for Space Borne Application. Preprints2023, 2023040525. https://doi.org/10.20944/preprints202304.0525.v1
Duinong, M.; Rasmidi, R.; Chee, F.P.; Salleh, S.; Rumaling, M.I.; Juhim, F.; Abdul Rani, A.I.; Chang, J.H.W. Finite Element Analysis of Radiation Effects on Metal Oxide based Semiconductor (MOS) for Space Borne Application. Preprints 2023, 2023040525. https://doi.org/10.20944/preprints202304.0525.v1
Duinong, M.; Rasmidi, R.; Chee, F.P.; Salleh, S.; Rumaling, M.I.; Juhim, F.; Abdul Rani, A.I.; Chang, J.H.W. Finite Element Analysis of Radiation Effects on Metal Oxide based Semiconductor (MOS) for Space Borne Application. Preprints2023, 2023040525. https://doi.org/10.20944/preprints202304.0525.v1
APA Style
Duinong, M., Rasmidi, R., Chee, F.P., Salleh, S., Rumaling, M.I., Juhim, F., Abdul Rani, A.I., & Chang, J.H.W. (2023). Finite Element Analysis of Radiation Effects on Metal Oxide based Semiconductor (MOS) for Space Borne Application. Preprints. https://doi.org/10.20944/preprints202304.0525.v1
Chicago/Turabian Style
Duinong, M., Abdul Ismail Abdul Rani and Jackson Hian Wui Chang. 2023 "Finite Element Analysis of Radiation Effects on Metal Oxide based Semiconductor (MOS) for Space Borne Application" Preprints. https://doi.org/10.20944/preprints202304.0525.v1
Abstract
In this paper, we present the investigation results of radiation-induced effects in metal-oxide-semiconductor (MOS) doped with moderate amounts of Zinc Oxide (ZnO) as a potential candidate for space-borne application. The samples were fabricated via the sputtering method at a working pressure of 3mTorr and a deposition temperature of 300oC. The ZnO samples were exposed to 1.25-MeV gamma-ray utilizing Co60 source, and their electronic response was measured at ionizing doses ranging from 10 kGy to 300 kGy. A comparative work was performed through finite element method to simulate the electronic response of the PN junction diode due to ionizing radiation. The results indicate that the ideality factor of the MOS diode increases as the ionizing dose increases, rendering it unsuitable for use as a diode. The degradation of the electrical parameters was also simulated, showing the increase in hole concentration. These findings suggest that the ejection of electrons occurred, which agrees with the gamma radiation effects trend. Furthermore, as the intensity of radiation increases, the spatial charge that arises from the separation of hole-electron pairs results in a substantial reduction of the electric field in the central portion of the n-type region. These findings provide insights into the degradation of electrical parameters in MOS devices under gamma radiation and have implications for their use in space-borne applications.
Keywords
MOS semiconductor; Zinc Oxide; Radiation Simulation; Finite Element Analysis; Radiation damage; Space application
Subject
Physical Sciences, Radiation and Radiography
Copyright:
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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