Empirical Characterization of ReRAM devices using Memory Maps and Dynamic Route Map

Rodrigo Picos; Stavros G. Stavrinides; Mohamad Moner Al Chawa; Carola de Benito; Salvador Dueñas; Helena Castán; Evripidis Hatzikraniotis; Leon O. Chua

doi:10.20944/preprints202204.0110.v1

Preprint Article Version 1 Preserved in Portico This version is not peer-reviewed

Version 1 : Received: 11 April 2022 / Approved: 12 April 2022 / Online: 12 April 2022 (10:19:59 CEST)

Memristors were proposed in the early ’70s of the XXth century by Leon Chua as a new electrical element linking the charge and the flux. Since that first introduction, these devices have positioned themselves to be considered as possibly fundamental for the new generations of electronic devices. It has to be mentioned that actual memristors have only been recognized to exist as physical elements. In this paper, we apply a modeling framework to generate a model describing experimental measurements performed on a ReRAM. We show how to apply the Dynamic Route Map technique in the general case to obtain an approximation to the differential equation that determines the behaviour of the device.

Memristor; RRAM; compact modeling; Charge and Flux; Phase space

Engineering, Electrical and Electronic Engineering

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Empirical Characterization of ReRAM devices using Memory Maps and Dynamic Route Map

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