Preprint Article Version 1 Preserved in Portico This version is not peer-reviewed

Bidirectional Electric-induced Conductance based on GeTe/Sb2Te3 Interfacial Phase Change Memory for Neuro-inspired Computing

Version 1 : Received: 24 September 2021 / Approved: 27 September 2021 / Online: 27 September 2021 (11:32:46 CEST)

A peer-reviewed article of this Preprint also exists.

Kang, S.-Y.; Jin, S.-M.; Lee, J.-Y.; Woo, D.-S.; Shim, T.-H.; Nam, I.-H.; Park, J.-G.; Sutou, Y.; Song, Y.-H. Bidirectional Electric-Induced Conductance Based on GeTe/Sb2Te3 Interfacial Phase Change Memory for Neuro-Inspired Computing. Electronics 2021, 10, 2692. Kang, S.-Y.; Jin, S.-M.; Lee, J.-Y.; Woo, D.-S.; Shim, T.-H.; Nam, I.-H.; Park, J.-G.; Sutou, Y.; Song, Y.-H. Bidirectional Electric-Induced Conductance Based on GeTe/Sb2Te3 Interfacial Phase Change Memory for Neuro-Inspired Computing. Electronics 2021, 10, 2692.

Abstract

Corresponding to the principles of biological synapses, an essential prerequisite for hardware neural networks using electronics devices is continuous regulation of conductance. We implemented artificial synaptic characteristics in a (GeTe/Sb2Te3)16 iPCM with a superlattice structure under optimized identical pulse trains. Based on atomically controlling the Ge switch in the phase transition that appears in the GeTe/Sb2Te3 superlattice structure, multiple conductance states were implemented by applying the appropriate electrical pulses. Furthermore, we found that the bidirectional switching behavior of a (GeTe/Sb2Te3)16 iPCM can achieve a desired resistance level using the pulse width. Therefore, we also fabricated a Ge2Sb2Te5 PCM and designed a pulse scheme based on the phase transition mechanism to compare to the (GeTe/Sb2Te3)16 iPCM. We designed an identical pulse scheme that implements linear and symmetrical LTP and LTD based on the iPCM mechanism. As a result, the (GeTe/Sb2Te3)16 iPCM showed relatively excellent synaptic characteristics by implementing gradual conductance modulation, a nonlinearity value of 0.32, and LTP/LTD 40 conductance states using identical pulses trains. Our results demonstrate the general applicability of the artificial synaptic device for potential use in neuro-inspired computing and next generation non-volatile memory.

Keywords

interfacial phase change memory; phase change memory; artificial synaptic device; superlattice; neuromorphic devices

Subject

Engineering, Electrical and Electronic Engineering

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