Preprint Article Version 1 Preserved in Portico This version is not peer-reviewed

Design of Composites by Infiltration Process: A Case Study of Liquid Ir-Si Alloy/SiC Systems

Version 1 : Received: 6 September 2021 / Approved: 7 September 2021 / Online: 7 September 2021 (14:53:07 CEST)

How to cite: Novakovic, R.; Delsante, S.; Giuranno, D. Design of Composites by Infiltration Process: A Case Study of Liquid Ir-Si Alloy/SiC Systems. Preprints 2021, 2021090131 (doi: 10.20944/preprints202109.0131.v1). Novakovic, R.; Delsante, S.; Giuranno, D. Design of Composites by Infiltration Process: A Case Study of Liquid Ir-Si Alloy/SiC Systems. Preprints 2021, 2021090131 (doi: 10.20944/preprints202109.0131.v1).

Abstract

The design of processing routes involving the presence of the liquid phase is mainly associated with the knowledge of its surface and transport properties. Despite this need, due to experimental difficulties related to high temperature measurements of metallic melts, for many alloy systems neither thermodynamic nor thermophysical properties data are available. A good example lacking these datasets represents the Ir-Si system, although over the last fifty years, the structures and properties of its solid phases have been widely investigated. To compensate the missing data, the Gibbs free energy of mixing of the Ir-Si liquid phase was calculated combining the model predicted values for the enthalpy and entropy of mixing using Miedema’s model and Free Volume Theory, respectively. Subsequently, in the framework of statistical mechanics and thermodynamics, the surface properties were calculated using the Quasi Chemical Approximation (QCA) for the regular solution, while to obtain the viscosity, the Moelwyn-Hughes (MH) and Terzieff models were applied. Subsequently, the predicted values of the abovementioned thermophysical properties were used to model the non-reactive infiltration isotherm of Ir-Si (eutectic) / SiC system.

Keywords

Ir-Si alloys; Modelling; Surface tension; Viscosity; Molar volume; Infiltration; SiC

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