Preprint Article Version 1 Preserved in Portico This version is not peer-reviewed

Effect of Aluminum Nitride Buffer Layer Deposited by Molecular Beam Epitaxy on the Growth of Aluminum Nitride Thin Films Deposited by DC Magnetron Sputtering Technique

Version 1 : Received: 13 July 2021 / Approved: 14 July 2021 / Online: 14 July 2021 (11:38:28 CEST)

How to cite: Riah, B.; Camus, J.; Ayad, A.; Rammal, M.; Zernadji, R.; Rouag, N.; Djouadi, M. Effect of Aluminum Nitride Buffer Layer Deposited by Molecular Beam Epitaxy on the Growth of Aluminum Nitride Thin Films Deposited by DC Magnetron Sputtering Technique. Preprints 2021, 2021070325 (doi: 10.20944/preprints202107.0325.v1). Riah, B.; Camus, J.; Ayad, A.; Rammal, M.; Zernadji, R.; Rouag, N.; Djouadi, M. Effect of Aluminum Nitride Buffer Layer Deposited by Molecular Beam Epitaxy on the Growth of Aluminum Nitride Thin Films Deposited by DC Magnetron Sputtering Technique. Preprints 2021, 2021070325 (doi: 10.20944/preprints202107.0325.v1).

Abstract

This paper reports the effect of silicon substrate orientation and aluminum nitride buffer layer deposited by molecular beam epitaxy on the growth of aluminum nitride thin films deposited by DC magnetron sputtering technique at low temperature. The structural analysis has revealed a strong (0001) fiber texture for both substrates Si (100) and (111) and a hetero-epitaxial growth on few nanometers AlN buffer layer grown by MBE on Si (111) substrate. SEM images and XRD characterization have shown an enhancement in AlN crystallinity thanks to AlN (MBE) buffer layer. Raman spectroscopy indicated that the AlN film was relaxed when it deposited on Si (111), in compression on Si (100) and under tension on AlN buffer layer grown by MBE/Si (111) substrates, respectively. The interface between Si (111) and AlN grown by MBE is abrupt and well defined; contrary to the interface between AlN deposited using PVD and AlN grown by MBE. Nevertheless, AlN hetero-epitaxial growth was obtained at low temperature (<250°C).

Subject Areas

Hexagonal AlN; thin films; Direct current magnetron sputtering; Texture; fiber; heteroepitaxial growth

Comments (0)

We encourage comments and feedback from a broad range of readers. See criteria for comments and our diversity statement.

Leave a public comment
Send a private comment to the author(s)
Views 0
Downloads 0
Comments 0
Metrics 0


×
Alerts
Notify me about updates to this article or when a peer-reviewed version is published.
We use cookies on our website to ensure you get the best experience.
Read more about our cookies here.