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Effect of Aluminum Nitride Buffer Layer Deposited by Molecular Beam Epitaxy on the Growth of Aluminum Nitride Thin Films Deposited by DC Magnetron Sputtering Technique
Riah, B.; Camus, J.; Ayad, A.; Rammal, M.; Zernadji, R.; Rouag, N.; Djouadi, M.A. Hetero-Epitaxial Growth of AlN Deposited by DC Magnetron Sputtering on Si(111) Using a AlN Buffer Layer. Coatings2021, 11, 1063.
Riah, B.; Camus, J.; Ayad, A.; Rammal, M.; Zernadji, R.; Rouag, N.; Djouadi, M.A. Hetero-Epitaxial Growth of AlN Deposited by DC Magnetron Sputtering on Si(111) Using a AlN Buffer Layer. Coatings 2021, 11, 1063.
Riah, B.; Camus, J.; Ayad, A.; Rammal, M.; Zernadji, R.; Rouag, N.; Djouadi, M.A. Hetero-Epitaxial Growth of AlN Deposited by DC Magnetron Sputtering on Si(111) Using a AlN Buffer Layer. Coatings2021, 11, 1063.
Riah, B.; Camus, J.; Ayad, A.; Rammal, M.; Zernadji, R.; Rouag, N.; Djouadi, M.A. Hetero-Epitaxial Growth of AlN Deposited by DC Magnetron Sputtering on Si(111) Using a AlN Buffer Layer. Coatings 2021, 11, 1063.
Abstract
This paper reports the effect of silicon substrate orientation and aluminum nitride buffer layer deposited by molecular beam epitaxy on the growth of aluminum nitride thin films deposited by DC magnetron sputtering technique at low temperature. The structural analysis has revealed a strong (0001) fiber texture for both substrates Si (100) and (111) and a hetero-epitaxial growth on few nanometers AlN buffer layer grown by MBE on Si (111) substrate. SEM images and XRD characterization have shown an enhancement in AlN crystallinity thanks to AlN (MBE) buffer layer. Raman spectroscopy indicated that the AlN film was relaxed when it deposited on Si (111), in compression on Si (100) and under tension on AlN buffer layer grown by MBE/Si (111) substrates, respectively. The interface between Si (111) and AlN grown by MBE is abrupt and well defined; contrary to the interface between AlN deposited using PVD and AlN grown by MBE. Nevertheless, AlN hetero-epitaxial growth was obtained at low temperature (<250°C).
Keywords
Hexagonal AlN; thin films; Direct current magnetron sputtering; Texture; fiber; heteroepitaxial growth
Subject
Chemistry and Materials Science, Biomaterials
Copyright:
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
