Effect of Aluminum Nitride Buffer Layer Deposited by Molecular Beam Epitaxy on the Growth of Aluminum Nitride Thin Films Deposited by DC Magnetron Sputtering Technique

B. Riah; Julien Camus; Abdelhak Ayad; Mohammad Rammal; Raouia Zernadji; Nadjet Rouag; M.A. Djouadi

doi:10.20944/preprints202107.0325.v1

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Article

Effect of Aluminum Nitride Buffer Layer Deposited by Molecular Beam Epitaxy on the Growth of Aluminum Nitride Thin Films Deposited by DC Magnetron Sputtering Technique

This version is not peer-reviewed.

B. Riah^*,

Julien Camus^*,Abdelhak Ayad,

Mohammad Rammal,Raouia Zernadji,Nadjet Rouag,

M.A. Djouadi^*

B. Riah^*,

Julien Camus^*,Abdelhak Ayad,

Mohammad Rammal,Raouia Zernadji,Nadjet Rouag,

M.A. Djouadi^*

This version is not peer-reviewed.

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Submitted:

13 July 2021

Posted:

14 July 2021

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Abstract

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Chemistry and Materials Science - Biomaterials

Copyright: This open access article is published under a Creative Commons CC BY 4.0 license, which permit the free download, distribution, and reuse, provided that the author and preprint are cited in any reuse.

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Effect of Aluminum Nitride Buffer Layer Deposited by Molecular Beam Epitaxy on the Growth of Aluminum Nitride Thin Films Deposited by DC Magnetron Sputtering Technique

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