Rourk, C.; Huang, Y.; Chen, M.; Shen, C. Indication of Strongly Correlated Electron Transport and Mott Insulator in Disordered Multilayer Ferritin Structures (DMFS). Materials2021, 14, 4527.
Rourk, C.; Huang, Y.; Chen, M.; Shen, C. Indication of Strongly Correlated Electron Transport and Mott Insulator in Disordered Multilayer Ferritin Structures (DMFS). Materials 2021, 14, 4527.
Rourk, C.; Huang, Y.; Chen, M.; Shen, C. Indication of Strongly Correlated Electron Transport and Mott Insulator in Disordered Multilayer Ferritin Structures (DMFS). Materials2021, 14, 4527.
Rourk, C.; Huang, Y.; Chen, M.; Shen, C. Indication of Strongly Correlated Electron Transport and Mott Insulator in Disordered Multilayer Ferritin Structures (DMFS). Materials 2021, 14, 4527.
Abstract
Highly-correlated electrons – electrons that engage in strong electron-electron interactions – have been observed in transition metal oxides and quantum dots and can create unusual material behavior that is difficult to model, such as switching between a low resistance metal state and a high resistance Mott insulator state. Tests of devices using a layer-by-layer deposition process for forming multilayer arrays of ferritin (a transition metal (iron) oxide storage protein) have been previously reported that indicate that highly-correlated electron transport is occurring, consistent with models of electron transport in quantum dots. This paper reports the results of the effect of various degrees of structural homogeneity on the electrical characteristics of these ferritin arrays, as well as demonstrating that these structures can provide a switching function associated with the circuit that they are contained within, consistent with the observed behavior of highly-correlated electrons.
Copyright:
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