Preprint Article Version 1 This version is not peer-reviewed

Switching of Lasing Wavelength and Threshold Current of Semiconductor Laser by Temperature Variation

Version 1 : Received: 15 June 2019 / Approved: 16 June 2019 / Online: 16 June 2019 (16:53:46 CEST)

How to cite: Manikandan, S. Switching of Lasing Wavelength and Threshold Current of Semiconductor Laser by Temperature Variation. Preprints 2019, 2019060150 (doi: 10.20944/preprints201906.0150.v1). Manikandan, S. Switching of Lasing Wavelength and Threshold Current of Semiconductor Laser by Temperature Variation. Preprints 2019, 2019060150 (doi: 10.20944/preprints201906.0150.v1).

Abstract

The present work is a theoretical and experimental study of temperature effect on wavelength and threshold current. Since Semiconductor lasers are the type of lasers which uses semiconductor material as a gain medium to achieve stimulated emission of radiation. In this module, the type of semiconductor lasers use is VCSEL and laser diode. Temperature change cause Semiconductor lasers to shift its threshold current, this variation also causes a shift in output wavelength. The experimental results highly agreement with the theoretical calculations.

Subject Areas

laser diode; wavelength; stimulated emission; temperature effect

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