Version 1
: Received: 15 June 2019 / Approved: 16 June 2019 / Online: 16 June 2019 (16:53:46 CEST)
How to cite:
Manikandan, S. Switching of Lasing Wavelength and Threshold Current of Semiconductor Laser by Temperature Variation. Preprints2019, 2019060150 (doi: 10.20944/preprints201906.0150.v1).
Manikandan, S. Switching of Lasing Wavelength and Threshold Current of Semiconductor Laser by Temperature Variation. Preprints 2019, 2019060150 (doi: 10.20944/preprints201906.0150.v1).
Cite as:
Manikandan, S. Switching of Lasing Wavelength and Threshold Current of Semiconductor Laser by Temperature Variation. Preprints2019, 2019060150 (doi: 10.20944/preprints201906.0150.v1).
Manikandan, S. Switching of Lasing Wavelength and Threshold Current of Semiconductor Laser by Temperature Variation. Preprints 2019, 2019060150 (doi: 10.20944/preprints201906.0150.v1).
Abstract
The present work is a theoretical and experimental study of temperature effect on wavelength and threshold current. Since Semiconductor lasers are the type of lasers which uses semiconductor material as a gain medium to achieve stimulated emission of radiation. In this module, the type of semiconductor lasers use is VCSEL and laser diode. Temperature change cause Semiconductor lasers to shift its threshold current, this variation also causes a shift in output wavelength. The experimental results highly agreement with the theoretical calculations.
Keywords
laser diode; wavelength; stimulated emission; temperature effect
Subject
ENGINEERING, General Engineering
Copyright:
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
