Preprint Review Version 1 This version is not peer-reviewed

Hysteretic Photochromic Switching (HPS) in Doubly Doped GaN(Mg):Eu—A Summary of Recent Results

Version 1 : Received: 6 July 2018 / Approved: 9 July 2018 / Online: 9 July 2018 (11:05:42 CEST)

A peer-reviewed article of this Preprint also exists.

Edwards, P.R.; O’Donnell, K.P.; Singh, A.K.; Cameron, D.; Lorenz, K.; Yamaga, M.; Leach, J.H.; Kappers, M.J.; Boćkowski, M. Hysteretic Photochromic Switching (HPS) in Doubly Doped GaN(Mg):Eu—A Summary of Recent Results. Materials 2018, 11, 1800. Edwards, P.R.; O’Donnell, K.P.; Singh, A.K.; Cameron, D.; Lorenz, K.; Yamaga, M.; Leach, J.H.; Kappers, M.J.; Boćkowski, M. Hysteretic Photochromic Switching (HPS) in Doubly Doped GaN(Mg):Eu—A Summary of Recent Results. Materials 2018, 11, 1800.

Journal reference: Materials 2018, 11, 1800
DOI: 10.3390/ma11101800

Abstract

Europium is the most-studied and least-well-understood rare earth ion (REI) dopant in GaN. While attempting to increase the efficiency of red GaN light-emitting diodes (LEDs) by implanting Eu+ into p-type GaN templates, the Strathclyde University group, in collaboration with IST Lisbon and Unipress Warsaw, discovered hysteretic photochromic switching (HPS) in the photoluminescence spectrum of doubly doped GaN(Mg):Eu. Our recent work, summarised in this contribution, has used time-, temperature- and light-induced changes in the Eu intra-4f shell emission spectrum to deduce the microscopic nature of the Mg-Eu defects that form in this material. As well as shedding light on the Mg acceptor in GaN, we propose a possible role for these emission centres in quantum information and computing.

Subject Areas

gallium nitride; rare earth ions; europium; photoluminescence; photochromism; qubit

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