Preprint Communication Version 1 This version is not peer-reviewed

Room-Temperature H2 Gas Sensing Characterization of Graphene-Doped Porous Silicon via a Facile Solution Dropping Method

These authors contributed equally to this work.
Version 1 : Received: 16 October 2017 / Approved: 16 October 2017 / Online: 16 October 2017 (08:00:59 CEST)

A peer-reviewed article of this Preprint also exists.

Eom, N.S.A.; Cho, H.-B.; Song, Y.; Lee, W.; Sekino, T.; Choa, Y.-H. Room-Temperature H2 Gas Sensing Characterization of Graphene-Doped Porous Silicon via a Facile Solution Dropping Method. Sensors 2017, 17, 2750. Eom, N.S.A.; Cho, H.-B.; Song, Y.; Lee, W.; Sekino, T.; Choa, Y.-H. Room-Temperature H2 Gas Sensing Characterization of Graphene-Doped Porous Silicon via a Facile Solution Dropping Method. Sensors 2017, 17, 2750.

Journal reference: Sensors 2017, 17, 2750
DOI: 10.3390/s17122750

Abstract

In this study, a graphene-doped porous silicon (G-doped/p-Si) substrate for low ppm H2 gas detection by an inexpensive synthesis route was proposed as a potential noble graphene-based gas sensor material and to understand the sensing mechanism. The G-doped/p-Si gas sensor was synthesized by a simple capillary force-assisted solution dropping method on p-Si substrates, whose porosity was generated through an electrochemical etching process. G-doped/p-Si was fabricated with various graphene concentrations and exploited as a H2 sensor operated at room temperature. The sensing mechanism of the sensor with/without graphene decoration on p-Si was proposed to elucidate the synergetic gas sensing effect generated from the interface between the graphene and p-type silicon.

Subject Areas

graphene-doped porous silicon; p-type silicon; hydrogen sensor; sensing mechanism

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