The effects of exogenous inorganic [i.e., nitrate (NO3-)/ammonium (NH4+)] and organic [i.e., glutamate (Glu)/argine (Arg)] N alone and in combination on the accumulation of proline (Pro) in rice plant under trivalent chromium [Cr(III)] stress were studied through the mass balance matrix model (MBMM). ‘NH4+’ application showed the largest contribution to the Pro content in rice shoots under different concentrations of Cr(III), followed by ‘NO3-’, ‘Arg’, and ‘Glu’ application respectively. While, ‘Arg’ application displayed the largest contribution to the Pro content in roots under Cr(III) stress, followed by ‘NH4+’, ‘Glu’, and ‘NO3-’ application. Among the combination cases of N sources used, the application of ‘NH4++Arg’ showed the greatest contribution to the Pro content in both roots and shoots of Cr(III)-treated rice seedlings, while the application of ‘NO3-+Glu’ showed the least contribution to the Pro content in rice seedlings under Cr(III) stress. Results from this study indicated that the level of indigenous Pro in rice seedlings is quite sensitive to Cr(III) stress under different N sources, and mathematical modeling showed a reliable result to estimate the relationship between Pro content and N source application in rice plants in response to Cr(III) exposure .

Thin film transistors (TFTs) using In-Ga-Zn Oxide (IGZO) as active layer and the gate insulator was treated with NH3 plasma and N2O plasma, respectively, which is fabricated on flexible PI substrate in this work. The performance of IGZO TFTs with different plasma species and treatment time are investigated and compared. The experiment results show that the plasma species and treatment time play an important role in the threshold voltage, field-effect mobility, Ion/Ioff ratio, sub-threshold swing (SS) and bias stress stability of the devices. The TFT with a 10 seconds NH3 plasma treatment shows the best performance; specifically, threshold voltage of 0.34 V, field-effect mobility of 15.97 cm2/Vs, Ion/Ioff ratio of 6.33×107, and sub-threshold swing of 0.36 V/dec. The proposed flexible IGZO-TFTs in this paper can be used as driving devices in the next-generation flexible displays.