Perfluorinated compounds (PFCs) are used in the manufacturing process of the semiconductor and display industries, and the need for emission reduction is growing as a greenhouse gas with a very large global warming potential. The decomposition characteristics of etch type and water film (WF) type plasma-wet scrubbers were investigated. The PFCs used in the study were CF4, SF6, NF3, CHF3, C2F6, C3F8, and C4F8, and the destruction removal efficiency (DRE) and by-product gas generation rate according to the changes in the parameters (total flow rate and power) of the plasma-wet scrubber were confirmed. When the total flow rate was 100 L/min and the measured maximum power (11 kW), the reduction efficiency of CF4 in the etch type was 95.60 % and the DRE of other PFCs was 99.99 %. And, in the WF type, the DRE of CF4 was 90.06 %, that of SF6 was 96.44 %, and that of other PFCs was 99.99 %. When the total flow rate was 300 L/min and 11 kW, the DRE of SF6 in the etch type was 99 %, and the DRE of NF3, CHF3, C2F6, C3F8, and C4F8 were 99.80 %, 95.34 %, 85.38 %, 88.49 %, and 98.22 %, respectively. And, in the WF type, the DRE of SF6 was 94.39 %, and the DRE of NF3, CHF3, C2F6, C3F8, and C4F8 were 99.80 %, 95.34 %, 85.38 %, 88.49 %, and 98.22 %, respectively. The by-product gas generation rate was significantly lower in the WF type.