ARTICLE
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doi:10.20944/preprints202402.1053.v1
Subject:
Engineering,
Electrical And Electronic Engineering
Keywords:
nanocrystalline silicon oxide; "nc:SiOx:H"; n-type; surface passivation; amorphous silicon; PECVD; effective carrier lifetime
Online: 20 February 2024 (06:08:53 CET)