Submitted:
26 March 2026
Posted:
30 March 2026
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Abstract
Keywords:
1. Introduction

2. Theoretical Methods and General Formal Development
2.1. General Liquid Reservoir and Charge Continuity
2.2. Maxwell Relaxation and Boundary Localization

2.3. Leakage-Limited Charge Storage and Dimensionless Admissibility Parameters
2.4. Operational Current Bounds from the Admissibility Set
2.5. Entry-Energy Criterion and Separation from Reaction Enthalpy
2.6. Generalized Positive and Negative Forcing Chemistry
Positive branch.
Negative branch.
2.7. Representative Stoichiometric Realizations
2.8. Noble-Gas Dication Thermodynamic Scale
3. Results and Discussion
3.1. Universal Positive Branch: Electron Removal from the Highest Available Occupied Density
3.1.1. Molecular Liquids and Lone-Pair Donors

3.1.2. Electron-Solvating Liquids

3.1.3. Halide-Containing Liquids
3.2. Universal Negative Branch: Electron Delivery Removes Dissolved Positive Charge
Water.
Electron-solvating media.
Salt solutions.

3.3. Solvent Classes and Carrier Manifolds
- Protic molecular liquids: donor density is strongly coupled to proton-transfer chemistry and hydrogen-bonded defect transport.
- Aprotic lone-pair-rich molecular liquids: donor density resides predominantly on heteroatom lone pairs and solvated anions.
- Electron-solvating liquids: donor density includes long-lived or metastable solvated-electron populations.
- Salt-containing liquids: carrier balance may be shifted by selective cation reduction or anion oxidation even when the neat solvent is not itself electron-rich.
3.4. Noble-Gas Selection as a Control Parameter
3.5. Entry Energy and Reaction Energy Are Independent Design Axes


4. Thermal, Mechanical, and Leakage Constraints
4.1. Illustrative Aqueous Benchmark

4.2. What This Benchmark Predicts Experimentally

5. Predictions, Falsifiers, and Limits
5.1. Chemical Falsifiers
- In the positive branch of water, positive forcing should correlate with proton-equivalent aqueous charge and with neutral coproducts Ng and O2.
- In the positive branch of halide-containing liquids, positive forcing should correlate with halogen evolution and retention of the corresponding cation-rich dissolved state.
- In the negative branch of salt solutions, electron delivery should correlate with cation reduction or plating and retention of an anion-rich dissolved state.
5.2. Electrostatic Falsifier
5.3. Mechanical and Current-Limit Falsifiers

5.4. Scaling and Thermal Falsifiers
5.5. Explicit Limits of the Present Reduction
- If or larger, the bulk-charge-free interior is no longer guaranteed and a full space-charge treatment is required.
- If strong ion pairing, complexation, or specific adsorption dominates the carrier inventory, the phrase “counterion-deficient” can become chemically ambiguous because charge may be hidden in associated species rather than absent from the dissolved population.
- If electrohydrodynamic circulation, vigorous gas evolution, or strong convection sets the leakage path, the single-time-constant storage law in Eq. 8 should be regarded as a first approximation rather than a closure.
6. Conclusions

Acknowledgments
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Supporting Information Available
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| Case | Representative stoichiometric relation | Retained dissolved charge character |
|---|---|---|
| Water, positive branch | Ng2+ + H2O(l) → Ng + 2H+(aq) + O2(g) | proton-rich aqueous charge |
| Water, negative branch | 2e− + 2H2O(l) → 2OH−(aq) + H2(g) | hydroxide-rich aqueous charge |
| Electron-solvating liquid, source step | M(s) → Mz+(solv) + z e−(solv) | latent paired charge reservoir |
| Electron-solvating liquid, positive branch | Ng2+ + 2e−(solv) → Ng | cation-rich dissolved state |
| Electron-solvating liquid, negative branch | Mz+(solv) + z e− → M | electron-rich or anion-rich dissolved state |
| Halide-containing liquid, positive branch | Ng2+ + 2X−(solv) → Ng + X2 | cation-rich retained state after anion oxidation |
| Salt solution, negative branch | M+(solv) + e− → M | anion-rich retained state after cation removal |
| Gas | (eV) | (eV) | Total (eV) | Total (kJ ) |
|---|---|---|---|---|
| He | 24.587 | 54.418 | 79.005 | 7622.8 |
| Ne | 21.565 | 40.963 | 62.528 | 6033.0 |
| Ar | 15.760 | 27.630 | 43.389 | 4186.4 |
| Kr | 13.999 | 24.360 | 38.359 | 3701.1 |
| Xe | 12.130 | 20.975 | 33.105 | 3194.1 |
| Quantity | Value | Role |
|---|---|---|
| Droplet radius R | 100 | geometry benchmark |
| Relative permittivity | 78.3 | electrostatic scale |
| Surface tension | mN m−1 | Rayleigh limit |
| Conductivity | S m−1 | Maxwell relaxation |
| Leakage time | 10 ms | bounded storage |
| Characteristic chemical time | s | forcing timescale |
| Breakdown benchmark | V m−1 | dielectric ceiling |
| Illustrative forcing current | 10 nA | sample operating point |
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