Preprint Article Version 1 Preserved in Portico This version is not peer-reviewed

Low-Noise Amplifier and Neurostimulator in submicron CMOS for Closed-Loop Deep-Brain Stimulation (CLDBS)

Tiago Matheus Nordi
ORCID logo ,
Rodrigo Henrique Gounella
ORCID logo ,
Gabriel Augusto Ginja
,
Márcio Luis Amorim
,
Maximiliam Luppe
ORCID logo ,
João Navarro Junior
,
Erich Talamoni Fonoff
,
Eduardo Colombari
,
Joao Paulo Carmo
* ORCID logo
Version 1 : Received: 16 May 2023 / Approved: 17 May 2023 / Online: 17 May 2023 (04:27:59 CEST)

How to cite: Nordi, T.M.; Gounella, R.H.; Ginja, G.A.; Amorim, M.L.; Luppe, M.; Junior, J.N.; Fonoff, E.T.; Colombari, E.; Carmo, J.P. Low-Noise Amplifier and Neurostimulator in submicron CMOS for Closed-Loop Deep-Brain Stimulation (CLDBS). Preprints 2023, 2023051182. https://doi.org/10.20944/preprints202305.1182.v1 Nordi, T.M.; Gounella, R.H.; Ginja, G.A.; Amorim, M.L.; Luppe, M.; Junior, J.N.; Fonoff, E.T.; Colombari, E.; Carmo, J.P. Low-Noise Amplifier and Neurostimulator in submicron CMOS for Closed-Loop Deep-Brain Stimulation (CLDBS). Preprints 2023, 2023051182. https://doi.org/10.20944/preprints202305.1182.v1

Abstract

Deep-Brain Stimulation (DBS) is a a highly effective and safe medical treatment that improves the lives of patients with a wide range of neurological and psychiatric deceases, and has been consolidated as a first-line tool in the treatment of these conditionsin the last two decades. Closed Loop Deep-Brain Stimulation (CLDBS) pushes this tool further by automatically adjusting the stimulation parameters to the brain response in real time. In this context, this paper presents a Low-Noise Amplifier (LNA) and a Neurostimulator circuits fabricated in the low-power/low-voltage 65 nm CMOS process from the TSMC, which were designed targeting implantable applications. To achieve the best trade-off between input-referred noise and power consuption, metaheuristic algorithms were employed to determine and optimizes the dimentions of the LNA devices during the design phase. The measurement results showed that the LNA had a gain of 40.6 dB, a 3 dB bandwidth spanning over three decades from 10 Hz to 8.6 kHz, and a power consumption of 6.19 uW. Simulations results indicated an input-referred noise of 4.86 uVrms for the LNA. The circuit of the Neurostimulator is a programmable Howland Current-Pump, whose measurements showed its ability to generate currents with arbitrary shapes ranging from between 325 uA to +318 uA. The simulations showed a quiescent power consumption of 0.13 W with a zero neurostimulation current. The LNA and the Neurostimulator circuits are supplied with 1.2 V voltage and occupy a microdevice area of 145 um x 311 um and 88 um x 89 um, respectively, making them suitable for implantation in applications involving Closed Loop Deep-Brain Stimulation.

Keywords

CMOS; Closed Loop Deep-Brain Stimulation (CLDBS); Low Noise Amplifier (LNA); Neurostimulation; Implantable Devices

Subject

Medicine and Pharmacology, Neuroscience and Neurology

Copyright: This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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