The wide application of graphene in the industry requires the direct growth of graphene films on silicon substrates. In this study, we find a possible technique to meet the requirement above. Multilayer graphene thin films (MLG) are grown without a catalyst on Si/SiO2 by pulsed laser deposition (PLD). It was found that the minimum number of laser pulses that are required to produce fully covered (uninterrupted) samples is 500. This number of laser pulses resulted in samples that contain ~5 layers of graphene. The number of layers was not affected by the laser fluence and the sample cooling rate after the deposition. However, the increase of the laser flu-ence from 0.9 J/cm2 to 1.5 J/cm2, results in 2.5 fold reduction of the MLG resistance. The present study reveals that the PLD method is suitable to produce nanocrystalline multilayer graphene with electrical conductivity of the same magnitude as commercial CVD graphene samples.
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