Preprint Review Version 1 Preserved in Portico This version is not peer-reviewed

Metal Assisted Catalytic Etching (MACE) for Nanofabrication of Semiconductor Powders

Version 1 : Received: 12 June 2021 / Approved: 14 June 2021 / Online: 14 June 2021 (15:04:41 CEST)

A peer-reviewed article of this Preprint also exists.

Kolasinski, K.W. Metal-Assisted Catalytic Etching (MACE) for Nanofabrication of Semiconductor Powders. Micromachines 2021, 12, 776. Kolasinski, K.W. Metal-Assisted Catalytic Etching (MACE) for Nanofabrication of Semiconductor Powders. Micromachines 2021, 12, 776.

Journal reference: Micromachines 2021, 12, 776
DOI: 10.3390/mi12070776

Abstract

Electroless etching of semiconductors was elevated to an advanced micromachining process by the addition of a structured metal catalyst. Patterning of the catalyst by lithographic techniques facilitates the patterning of crystalline and polycrystalline wafer substrates. Galvanic deposition of metals on semiconductors has a natural tendency to produce nanoparticles rather than flat uniform films. This characteristic makes possible the etching of not only wafers but also particles with arbitrary shape. While it has been widely recognized that spontaneous deposition of metal nanoparticles can be used in connection with etching to porosify wafers, it is also possible to produced nanostructured powders. MACE can be controlled to produce (1) etch track pores with shapes and sizes closely related to the shape and size of the metal nanoparticle, (2) hierarchically porosified substrates exhibiting combinations of large etch track pores and mesopores, and (3) nanowires with either solid or mesoporous cores. This review discussed the mechanisms of porosification, processing advances and the properties of the etch product with special emphasis on the etching of silicon powders.

Subject Areas

metal assisted etching; metal assisted catalytic etching, silicon nanowires, porous silicon, porous powders, metal nanoparticles, deposition

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