Preprint Article Version 1 Preserved in Portico This version is not peer-reviewed

Optically Modulated Resistance Switching Polarities in BaTiO3 Thin Film

Version 1 : Received: 17 September 2020 / Approved: 21 September 2020 / Online: 21 September 2020 (07:42:10 CEST)

How to cite: Wang, J.; Bedford, B.; Chen, C.; Miao, L.; Luo, B. Optically Modulated Resistance Switching Polarities in BaTiO3 Thin Film. Preprints 2020, 2020090499 (doi: 10.20944/preprints202009.0499.v1). Wang, J.; Bedford, B.; Chen, C.; Miao, L.; Luo, B. Optically Modulated Resistance Switching Polarities in BaTiO3 Thin Film. Preprints 2020, 2020090499 (doi: 10.20944/preprints202009.0499.v1).

Abstract

The light response and resistance switching behavior in BaTiO3 (BTO) films are studied for a symmetric Pt/BTO/Pt structure. The resistance of films as a function of time with and without ultraviolet light has been studied. Furthermore, resistance switching behavior was clearly observed based on the application of 365 nm wavelength ultraviolet light. Consequently, the polarities of resistance switching can be controlled by ultraviolet light when the energy is larger than the band excitation energy. It is proposed that the polarity of the resistance switching is dictated by the competition of the ferroelectricity and oxygen vacancy migration. This provides a new mechanism for modulating the state of ferroelectric resistive memory devices.

Subject Areas

resistance switching; ferroelectric polarization; oxygen vacancies; thin films; phontoresponse

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