Version 1
: Received: 17 September 2020 / Approved: 21 September 2020 / Online: 21 September 2020 (07:42:10 CEST)
How to cite:
Wang, J.; Bedford, B.; Chen, C.; Miao, L.; Luo, B. Optically Modulated Resistance Switching Polarities in BaTiO3 Thin Film. Preprints.org2020, 2020090499. https://doi.org/10.20944/preprints202009.0499.v1.
Wang, J.; Bedford, B.; Chen, C.; Miao, L.; Luo, B. Optically Modulated Resistance Switching Polarities in BaTiO3 Thin Film. Preprints.org 2020, 2020090499. https://doi.org/10.20944/preprints202009.0499.v1.
Cite as:
Wang, J.; Bedford, B.; Chen, C.; Miao, L.; Luo, B. Optically Modulated Resistance Switching Polarities in BaTiO3 Thin Film. Preprints.org2020, 2020090499. https://doi.org/10.20944/preprints202009.0499.v1.
Wang, J.; Bedford, B.; Chen, C.; Miao, L.; Luo, B. Optically Modulated Resistance Switching Polarities in BaTiO3 Thin Film. Preprints.org 2020, 2020090499. https://doi.org/10.20944/preprints202009.0499.v1.
Abstract
The light response and resistance switching behavior in BaTiO3 (BTO) films are studied for a symmetric Pt/BTO/Pt structure. The resistance of films as a function of time with and without ultraviolet light has been studied. Furthermore, resistance switching behavior was clearly observed based on the application of 365 nm wavelength ultraviolet light. Consequently, the polarities of resistance switching can be controlled by ultraviolet light when the energy is larger than the band excitation energy. It is proposed that the polarity of the resistance switching is dictated by the competition of the ferroelectricity and oxygen vacancy migration. This provides a new mechanism for modulating the state of ferroelectric resistive memory devices.
Chemistry and Materials Science, Surfaces, Coatings and Films
Copyright:
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
