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Metal-Insulator Transition in Three-Dimensional Semiconductors
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: Received: 21 October 2019 / Approved: 22 October 2019 / Online: 22 October 2019 (15:40:00 CEST)
How to cite: Ziegler, K. Metal-Insulator Transition in Three-Dimensional Semiconductors. Preprints 2019, 2019100260 Ziegler, K. Metal-Insulator Transition in Three-Dimensional Semiconductors. Preprints 2019, 2019100260
Abstract
We use a random gap model to describe a metal-insulator transition in three-dimensional semiconductors due to doping and find a conventional phase transition, where the effective scattering rate is the order parameter. Spontaneous symmetry breaking results in metallic behavior, whereas the insulating regime is characterized by the absence of spontaneous symmetry breaking. The transition is continuous for the average conductivity with critical exponent equal to 1. Away from the critical point the exponent is roughly 0.6, which may explain experimental observations of a crossover of the exponent from 1 to 0.5 by going away from the critical point.
Keywords
particle-hole symmetry; metal-insulator transition; random gap model
Copyright: This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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