PreprintArticleVersion 1This version is not peer-reviewed
First-Principles Investigation of the Impact of High Pressure on the Structural, Electronic and Elastic Oroperties of the Type-VIII Barium-Doped Silicon Clathrate Ba8Si46.
Version 1
: Received: 5 November 2018 / Approved: 8 November 2018 / Online: 8 November 2018 (14:08:28 CET)
How to cite:
Mahammedi, N.A.; Ferhat, M. First-Principles Investigation of the Impact of High Pressure on the Structural, Electronic and Elastic Oroperties of the Type-VIII Barium-Doped Silicon Clathrate Ba8Si46.. Preprints2018, 2018110139 (doi: 10.20944/preprints201811.0139.v1).
Mahammedi, N.A.; Ferhat, M. First-Principles Investigation of the Impact of High Pressure on the Structural, Electronic and Elastic Oroperties of the Type-VIII Barium-Doped Silicon Clathrate Ba8Si46.. Preprints 2018, 2018110139 (doi: 10.20944/preprints201811.0139.v1).
Cite as:
Mahammedi, N.A.; Ferhat, M. First-Principles Investigation of the Impact of High Pressure on the Structural, Electronic and Elastic Oroperties of the Type-VIII Barium-Doped Silicon Clathrate Ba8Si46.. Preprints2018, 2018110139 (doi: 10.20944/preprints201811.0139.v1).
Mahammedi, N.A.; Ferhat, M. First-Principles Investigation of the Impact of High Pressure on the Structural, Electronic and Elastic Oroperties of the Type-VIII Barium-Doped Silicon Clathrate Ba8Si46.. Preprints 2018, 2018110139 (doi: 10.20944/preprints201811.0139.v1).
Abstract
By means of density functional theory (DFT) calculations, we have investigated the effect of hydrostatic pressure on the structural, electronic and elastic properties of the barium-doped silicon clathrate Ba8Si46 in the type-VIII structure (α phase). Physical properties are calculated under different conditions of pressure (0 GPa to 45 GPa) using the GGA-PBE functional, those calculations have been performed using the Cambridge serial total energy package CASTEP code within the Materials Studio package. Electronic properties have shown that the type-VIII Ba8Si46 has metal-like properties with a fundamental bandgap of 1 eV. Under pressure the fundamental bandgap increases slightly and the positions of the valence band maximum VBM and the conduction band minimum CBM remain unchanged. We found that the compound is mechanically stable under the pressure range, but this needs to be confirmed experimentally through synthesis, a comparison with the type-I and the guest-free counterparts has exhibited promising features for the type-VIII Ba8Si46.
Subject Areas
Silicon clathrates; Electronic structure; Elastic constants; High pressure; Density Functional Theory; Castep
Copyright:
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Nassim Ahmed Mahammedi