Mallik, A.K.; Shih, W.-C.; Pobedinskas, P.; Haenen, K. Early Periods of Low-Temperature Linear Antenna CVD Nucleation and Growth Study of Nanocrystalline Diamond Films. Coatings2024, 14, 184.
Mallik, A.K.; Shih, W.-C.; Pobedinskas, P.; Haenen, K. Early Periods of Low-Temperature Linear Antenna CVD Nucleation and Growth Study of Nanocrystalline Diamond Films. Coatings 2024, 14, 184.
Mallik, A.K.; Shih, W.-C.; Pobedinskas, P.; Haenen, K. Early Periods of Low-Temperature Linear Antenna CVD Nucleation and Growth Study of Nanocrystalline Diamond Films. Coatings2024, 14, 184.
Mallik, A.K.; Shih, W.-C.; Pobedinskas, P.; Haenen, K. Early Periods of Low-Temperature Linear Antenna CVD Nucleation and Growth Study of Nanocrystalline Diamond Films. Coatings 2024, 14, 184.
Abstract
: Low-temperature growth of diamond films by chemical vapor deposition (CVD) method is not so widely reported and especially its initial periods of nucleation and growth phenomenon are of particular interest to the researchers. Four sets of substrates were selected for growing diamond films by linear antenna microwave plasma enhanced CVD (LA-MPCVD). Among them, silicon and sapphire substrates were pre-treated with detonation nanodiamond (DND) seeds before diamond growth for enhancement of its nucleation. On the other hand, carbon nanotube (CNT) films on Si substrates were also used as another template for LA-MPCVD diamond growth. In order to enhance the diamond nucleation during CVD growth, some of the CNT films were again pre-treated by electrophoretic deposition (EPD) of diamond nanoparticles. All these substrates were then put inside the LA-MPCVD chamber for growing diamond films under variable processing conditions. Microwave input powers (1100 – 2800 W), input power modes (pulse or continuous), antenna to stage distances (5 - 6.5 cm), process gas recipes (with or without CO2), methane gas percentages (3 - 5%), deposition times (11 – 120 minutes) were altered to investigate their effect on the growth of diamond film on the pre-treated substrates. The substrate temperatures were found to vary from as low as 170oC to a maximum of 307oC during the alteration of the different processing parameters. Contrary to the conventional MPCVD, it was observed that during the first hour of LA-MPCVD diamond growth, DND seeds or the nucleating structures, do not coalesce together to make a continuous film. Deposition time was the most critical factor in fully covering the substrate surfaces with diamond film, since the substrate temperature could not become stable during the first hour of LA-MPCVD. CNT was found to be oxidised rapidly under LA-MPCVD plasma conditions; therefore, a CO2-free process gas recipe was used to reduce CNT burning. Moreover, EPD-coated CNT was found to be less oxidised by the LACVD plasma during diamond growth.
Keywords
linear antenna microwave plasma chemical vapor deposition (LA-MPCVD); Early growth stage; Low temperature; Nanodiamond; Carbon nanotube (CNT); Substrate seeding
Subject
Chemistry and Materials Science, Surfaces, Coatings and Films
Copyright:
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