Preprint Article Version 1 Preserved in Portico This version is not peer-reviewed

Highly Efficient All-Solution Processed Quantum Dot Light-Emitting Diodes Using MoO3 Nanoparticle Hole Injection Layer

Version 1 : Received: 8 June 2023 / Approved: 8 June 2023 / Online: 8 June 2023 (04:38:03 CEST)

A peer-reviewed article of this Preprint also exists.

Yang, J.-H.; Jang, G.-P.; Kim, S.-Y.; Chae, Y.-B.; Lee, K.-H.; Moon, D.-G.; Kim, C.-K. Highly Efficient All-Solution-Processed Quantum Dot Light-Emitting Diodes Using MoOx Nanoparticle Hole Injection Layer. Nanomaterials 2023, 13, 2324. Yang, J.-H.; Jang, G.-P.; Kim, S.-Y.; Chae, Y.-B.; Lee, K.-H.; Moon, D.-G.; Kim, C.-K. Highly Efficient All-Solution-Processed Quantum Dot Light-Emitting Diodes Using MoOx Nanoparticle Hole Injection Layer. Nanomaterials 2023, 13, 2324.

Abstract

This paper presents a study aimed at enhancing the performance of quantum dot light-emitting didoes (QLEDs) by employing a solution-processed molybdenum oxide (MoO3) nanoparticle (NP) as a hole injection layer (HIL). The study investigates the impact of varying the concentrations of the MoO3 NP layer on device characteristics and explores the underlying mechanisms responsible for the observed enhancements. Experimental techniques such as an X-ray diffraction and field-emission transmission electron microscopy were employed to confirm the formation of MoO3 NPs during the synthesis process. Ultraviolet photoelectron spectroscopy is employed to analyze the electron structure of the QLEDs. The QLED with an 8 mg/mL concentration of MoO3 nanoparticles achieves remarkable improvements in device performance, with a maximum luminance of 69,240.7 cd/cm2, maximum current efficiency of 56.0 cd/A, and maximum external quantum efficiency (EQE) of 13.2%. The obtained results signify a notable progress in comparison to QLED without HIL and those utilizing the widely used poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) HIL. They exhibit a remarkable enhancement of 59.5% and 26.4% in maximum current efficiency, respectively, as well as a significant improvement of 42.7% and 20.0% in maximum EQE, respectively. This study opens up new possibilities for the selection of HIL and the fabrication of solution-processed QLEDs, contributing to the potential commercialization of these devices in the future.

Keywords

quantum dot light-emitting diode; solution process; MoO3 nanoparticles; hole injection layer; charge balance

Subject

Engineering, Electrical and Electronic Engineering

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