Preprint Article Version 1 Preserved in Portico This version is not peer-reviewed

Area-Selective (Inhibited) Atomic Layer Deposition of ZnO on Si/SiO2 Using Tris(trimethylamino)methylsilane

Behnam Moeini
ORCID logo ,
Tahereh Avval
,
Hidde Brongersma
,
Stanislav Průša
,
Pavel Bábík
ORCID logo ,
Elena Vaníčková
,
Brian R Strohmeier
,
David S Bell
ORCID logo ,
Dennis Eggett
,
Steven M George
ORCID logo ,
Matthew R Linford
* ORCID logo
Version 1 : Received: 26 May 2023 / Approved: 30 May 2023 / Online: 30 May 2023 (04:40:59 CEST)

A peer-reviewed article of this Preprint also exists.

Moeini, B.; Avval, T.G.; Brongersma, H.H.; Průša, S.; Bábík, P.; Vaníčková, E.; Strohmeier, B.R.; Bell, D.S.; Eggett, D.; George, S.M.; Linford, M.R. Area-Selective Atomic Layer Deposition of ZnO on Si\SiO2 Modified with Tris(dimethylamino)methylsilane. Materials 2023, 16, 4688. Moeini, B.; Avval, T.G.; Brongersma, H.H.; Průša, S.; Bábík, P.; Vaníčková, E.; Strohmeier, B.R.; Bell, D.S.; Eggett, D.; George, S.M.; Linford, M.R. Area-Selective Atomic Layer Deposition of ZnO on Si\SiO2 Modified with Tris(dimethylamino)methylsilane. Materials 2023, 16, 4688.

Abstract

Delayed atomic layer deposition (ALD) of ZnO, i.e., area selective (AS)-ALD, was successfully achieved on silicon wafers (Si/SiO2) terminated with tris(dimethylamino)methylsilane (TDMAMS). This resist molecule was deposited in a home-built, near atmospheric pressure, flow-through , gas-phase reactor. TDMAMS has been shown to react with Si/SiO2 in a single cycle/reaction and to drastically reduce the number of silanols that remain at the surface. ZnO was deposited in a commercial ALD system using dimethylzinc (DMZ) as the zinc precursor and H2O as the coreactant. Deposition of TDMAMS was confirmed by spectroscopic ellipsometry (SE), X-ray photoelectron spectroscopy (XPS), and wetting. ALD of ZnO, including its selectivity on TDMAMS – terminated Si/SiO2 (Si/SiO2/TDMAMS), was confirmed by in situ ellipsometry, ex situ SE, XPS, and/or high sensitivity – low energy ion scattering (HS-LEIS). The thermal stability of the TDMAMS resist layer, which is an important parameter for AS-ALD, was investigated by heating Si/SiO2/TDMAMS in air and nitrogen at 330 ºC. ALD of ZnO takes place more readily on Si/SiO2/TDMAMS heated in the air than in N2, suggesting greater damage to the surface heated in the air. To better understand the in situ ALD of ZnO, the data were also plotted as the normalized growth per cycle and to show the selectivity. Even one, short pulse of TDMAMS effectively passivates Si/SiO2. TDMAMS can be an effective small molecule inhibitor of ALD of ZnO on Si/SiO2 surfaces.

Keywords

Atomic layer deposition; ALD; Silane; Area-selective; XPS; LEIS

Subject

Chemistry and Materials Science, Surfaces, Coatings and Films

Copyright: This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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