Pooja, P.; Chien, C.C.; Chin, A. Superior High Transistor’s Effective Mobility of 325 cm2/V-s by 5 nm Quasi-Two-Dimensional SnON nFET. Nanomaterials2023, 13, 1892.
Pooja, P.; Chien, C.C.; Chin, A. Superior High Transistor’s Effective Mobility of 325 cm2/V-s by 5 nm Quasi-Two-Dimensional SnON nFET. Nanomaterials 2023, 13, 1892.
Pooja, P.; Chien, C.C.; Chin, A. Superior High Transistor’s Effective Mobility of 325 cm2/V-s by 5 nm Quasi-Two-Dimensional SnON nFET. Nanomaterials2023, 13, 1892.
Pooja, P.; Chien, C.C.; Chin, A. Superior High Transistor’s Effective Mobility of 325 cm2/V-s by 5 nm Quasi-Two-Dimensional SnON nFET. Nanomaterials 2023, 13, 1892.
Abstract
This work reports the first nanocrystalline SnON (7.6 % Nitrogen content) n-type nanosheet Field-Effect Transistor (nFET) with transistor’s effective mobility (µeff) as high as 357 and 325 cm2/V-s at electron density (Qe) of 5×1012 cm-2 and ultra-thin body thickness (Tbody) of 7 and 5 nm, respectively. At the same Tbody and Qe, these µeff values are significantly higher than single crystalline Si, InGaAs, thin-body Si-on-Insulator (SOI), two-dimensional (2D) MoS2 and WS2. New discovery of slower µeff decay rate at high Qe than SiO2/bulk-Si universal curve was found, owing to one order of magnitude lower effective field (Eeff) by more than 10 times higher dielectric constant () in channel material, which keeps the electron wave-function away from the gate-oxide/semiconductor interface and lowers the gate-oxide surface scattering. In addition, the high µeff is also due to the overlapped large radius s-orbitals, low 0.29 mo effective mass (me*) and low polar optical phonon scattering. SnON nFETs with record-breaking µeff and quasi-2D thickness enable potential monolithic three-dimensional (3D) integrated circuit (IC) and embedded memory for 3D biological brain-mimicking structures.
Keywords
high mobility; thin film transistors; SnON; SnO2; density functional theory
Subject
Engineering, Electrical and Electronic Engineering
Copyright:
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
