Preprint Article Version 1 Preserved in Portico This version is not peer-reviewed

Crucible Free Growth of Bulk B-Ga2O3 Single Crystal Scintillator Under Oxidizing Atmosphere

Version 1 : Received: 30 April 2023 / Approved: 1 May 2023 / Online: 1 May 2023 (00:23:55 CEST)

A peer-reviewed article of this Preprint also exists.

Kamada, K.; Sasaki, R.; Tomida, T.; Takahashi, I.; Yoshino, M.; Horiai, T.; Murakami, R.; Kochurikhin, V.; Shoji, Y.; Kakimoto, K.; Yoshikawa, A. Crucible-Free Growth of Bulk b-Ga2O3 Single-Crystal Scintillator under Oxidizing Atmosphere. Crystals 2023, 13, 921. Kamada, K.; Sasaki, R.; Tomida, T.; Takahashi, I.; Yoshino, M.; Horiai, T.; Murakami, R.; Kochurikhin, V.; Shoji, Y.; Kakimoto, K.; Yoshikawa, A. Crucible-Free Growth of Bulk b-Ga2O3 Single-Crystal Scintillator under Oxidizing Atmosphere. Crystals 2023, 13, 921.

Abstract

β-Ga2O3 is a well-known semiconductor material for power devices and other applications. Recently, β-Ga2O3 has also been reported as a scintillator material with a light yield of approximately 8400 ph./MeV, scintillation decay time of <1 μs, and density of 6.44 g/cm3. In this study, 2-inch diameter β-Ga2O3 single crystals were prepared by oxide crystal growth using the cold crucible (OCCC) method under various oxygen partial pressures. In the OCCC method, as in the cold crucible method, a high frequency is applied directly to the oxide materials, which are heated and melted, and the melt is held by the outermost solid material itself that is cooled by water using a copper hearth. In the OCCC method, crystal growth is performed while rotating the seed crystal, as in the Czochralski method, to increase the crystal diameter. The optical properties and radiation responses of the crystals grown under various oxygen partial pressures were evaluated.

Keywords

Czochralski method; gallium oxide; scintillator; melt growth

Subject

Chemistry and Materials Science, Materials Science and Technology

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