Dehzangi, A. Comparative Study on Planar Type-II Strained-Layer Superlattice Infrared Photodetectors Fabricated by Ion-Implantation. Appl. Sci.2022, 12, 6114.
Dehzangi, A. Comparative Study on Planar Type-II Strained-Layer Superlattice Infrared Photodetectors Fabricated by Ion-Implantation. Appl. Sci. 2022, 12, 6114.
Dehzangi, A. Comparative Study on Planar Type-II Strained-Layer Superlattice Infrared Photodetectors Fabricated by Ion-Implantation. Appl. Sci.2022, 12, 6114.
Dehzangi, A. Comparative Study on Planar Type-II Strained-Layer Superlattice Infrared Photodetectors Fabricated by Ion-Implantation. Appl. Sci. 2022, 12, 6114.
Abstract
Strained layer superlattice (SLS) material system is being considered for large format, small-pitch and low-cost focal plane arrays for different applications. To address difficulties associated to focal plane arrays fabrication arising from mesa-isolation etching or complex surface treatment/ passivation process, planar structures have been considered. In this work, the recent progress on planar SLS photodetector using ion-implantation for device isolation is presented. The devices are presented here are nBn and pBn heterostructure InAs/InAsSb SLS photodetector, where Zn and Si were chosen as the ion implants, respectively. The electrical and optical performance of the devices were compared along with comparison with mesa-etched device, to give deeper view of the device performance.
Keywords
Ion Implantation; Planar photodetectors; Strained layer superlattice; Quantum efficiency; Ion implantation energy
Subject
Physical Sciences, Applied Physics
Copyright:
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