Set-Up Method on Properties of BaXSr1-XTiO3 Thin Films Deposited by RF-Magnetron Co-Sputtering by Projecting Temperature and Stoichiometric Effect

J. L. Estrada-Martínez; J. A. Melo-Banda; U. Páramo-García; J. Reséndiz-Muñoz; J. L. Fernández-Muñoz; M. Meléndez-Lira; O. Zelaya-Ángel

doi:10.20944/preprints201710.0043.v1

How to cite: Estrada-Martínez, J.L.; Melo-Banda, J.A.; Páramo-García, U.; Reséndiz-Muñoz, J.; Fernández-Muñoz, J.L.; Meléndez-Lira, M.; Zelaya-Ángel, O. Set-Up Method on Properties of Ba_XSr_1-XTiO₃ Thin Films Deposited by RF-Magnetron Co-Sputtering by Projecting Temperature and Stoichiometric Effect. Preprints 2017, 2017100043. https://doi.org/10.20944/preprints201710.0043.v1 Estrada-Martínez, J.L.; Melo-Banda, J.A.; Páramo-García, U.; Reséndiz-Muñoz, J.; Fernández-Muñoz, J.L.; Meléndez-Lira, M.; Zelaya-Ángel, O. Set-Up Method on Properties of BaXSr1-XTiO3 Thin Films Deposited by RF-Magnetron Co-Sputtering by Projecting Temperature and Stoichiometric Effect. Preprints 2017, 2017100043. https://doi.org/10.20944/preprints201710.0043.v1

Abstract

Thin films (100-400 nm) of Ba_xSr_1-xTiO₃ (0≤x≤1) deposited in RF-magnetron co-sputtering equipment are presented in this research work. The change of deposition rate, gap energy, and resistivity as a function of temperature- applied power change in the growth parameters was studied through the ISO colour-code lines constructed with MATLAB: By analysing the trend information and take into account the influence of the calculated "x" parameter with the Boltzmann profile fitting is proposed a method to allow a controlled set up of the RF-magnetron co-sputtering system and predict the E_g and resistivity values in the Ba_xSr_1-xTiO₃ solid solution with 0≤x≤1 for amorphous and crystalline phases. Also, a versatile tool to optimise the deposition process and material properties.

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Set-Up Method on Properties of BaXSr1-XTiO3 Thin Films Deposited by RF-Magnetron Co-Sputtering by Projecting Temperature and Stoichiometric Effect

Abstract

Keywords

Subject

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Set-Up Method on Properties of Ba_XSr_1-XTiO₃ Thin Films Deposited by RF-Magnetron Co-Sputtering by Projecting Temperature and Stoichiometric Effect