Preprint Article Version 1 This version is not peer-reviewed

Set-Up Method on Properties of BaXSr1-XTiO3 Thin Films Deposited by RF-Magnetron Co-Sputtering by Projecting Temperature and Stoichiometric Effect

Version 1 : Received: 6 October 2017 / Approved: 9 October 2017 / Online: 9 October 2017 (05:20:59 CEST)

How to cite: Estrada-Martínez, J.L.; Melo-Banda, J.A.; Páramo-García, U.; Reséndiz-Muñoz, J.; Fernández-Muñoz, J.L.; Meléndez-Lira, M.; Zelaya-Ángel, O. Set-Up Method on Properties of BaXSr1-XTiO3 Thin Films Deposited by RF-Magnetron Co-Sputtering by Projecting Temperature and Stoichiometric Effect. Preprints 2017, 2017100043 (doi: 10.20944/preprints201710.0043.v1). Estrada-Martínez, J.L.; Melo-Banda, J.A.; Páramo-García, U.; Reséndiz-Muñoz, J.; Fernández-Muñoz, J.L.; Meléndez-Lira, M.; Zelaya-Ángel, O. Set-Up Method on Properties of BaXSr1-XTiO3 Thin Films Deposited by RF-Magnetron Co-Sputtering by Projecting Temperature and Stoichiometric Effect. Preprints 2017, 2017100043 (doi: 10.20944/preprints201710.0043.v1).

Abstract

Thin films (100-400 nm) of BaxSr1-xTiO3 (0≤x≤1) deposited in RF-magnetron co-sputtering equipment are presented in this research work. The change of deposition rate, gap energy, and resistivity as a function of temperature- applied power change in the growth parameters was studied through the ISO colour-code lines constructed with MATLAB: By analysing the trend information and take into account the influence of the calculated "x" parameter with the Boltzmann profile fitting is proposed a method to allow a controlled set up of the RF-magnetron co-sputtering system and predict the Eg and resistivity values in the BaxSr1-xTiO3 solid solution with 0≤x≤1 for amorphous and crystalline phases. Also, a versatile tool to optimise the deposition process and material properties.

Subject Areas

BaxSr1-xTiO3 films; boltzmann modelling; optical band gap; deposition rate; stoichiometric content

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