Preprint Article Version 1 Preserved in Portico This version is not peer-reviewed

Unveiling the Doping and Temperature Dependent Properties of Organic Semiconductor Orthorhombic Rubrene from First-Principles

Version 1 : Received: 24 March 2024 / Approved: 25 March 2024 / Online: 25 March 2024 (12:51:39 CET)

How to cite: Olowookere, I.; Adebambo, P.O.; Agbaoye, R.O.; Raji, A.T.; Idowu, M.A.; Kenmoe, S.; Adebayo, G.A. Unveiling the Doping and Temperature Dependent Properties of Organic Semiconductor Orthorhombic Rubrene from First-Principles. Preprints 2024, 2024031483. https://doi.org/10.20944/preprints202403.1483.v1 Olowookere, I.; Adebambo, P.O.; Agbaoye, R.O.; Raji, A.T.; Idowu, M.A.; Kenmoe, S.; Adebayo, G.A. Unveiling the Doping and Temperature Dependent Properties of Organic Semiconductor Orthorhombic Rubrene from First-Principles. Preprints 2024, 2024031483. https://doi.org/10.20944/preprints202403.1483.v1

Abstract

Due to its large hole mobility, Organic Rubrene (C42H28) has attracted research questions on its applications in electronic devices. In this work, extensive first-principles calculations were made to predict some temperature and doping dependent properties of Organic Semi- conductor Rubrene. We use Density Functional Theory (DFT) to investigate the electronic structure, elastic and transport properties of the Orthorhombic phase of the Rubrene compound. The calcu- lated band structure shows the Orthorhombic phase has a direct bandgap of 1.26 eV. From the Vickers hardness (1.080 GPa), our calculations show that Orthorhombic Rubrene is not a super hard material and can find useful application as a flexible semicon- ductor. The calculated transport Inverse Effective Mass and Elec- tronic Fitness Function show that the Orthorhombic Rubrene Crystal Structure is a p-type thermoelectric material at high temperatures.

Keywords

Electronic Structure; DFT; Thermoelectric; Organic Semiconductor Rubrene; Transport Properties

Subject

Physical Sciences, Condensed Matter Physics

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