Zivieri, R.; Lumetti, S.; Létang, J. High-Mobility Topological Semimetals as Novel Materials for Huge Magnetoresistance Effect and New Type of Quantum Hall Effect. Materials2023, 16, 7579.
Zivieri, R.; Lumetti, S.; Létang, J. High-Mobility Topological Semimetals as Novel Materials for Huge Magnetoresistance Effect and New Type of Quantum Hall Effect. Materials 2023, 16, 7579.
Zivieri, R.; Lumetti, S.; Létang, J. High-Mobility Topological Semimetals as Novel Materials for Huge Magnetoresistance Effect and New Type of Quantum Hall Effect. Materials2023, 16, 7579.
Zivieri, R.; Lumetti, S.; Létang, J. High-Mobility Topological Semimetals as Novel Materials for Huge Magnetoresistance Effect and New Type of Quantum Hall Effect. Materials 2023, 16, 7579.
Abstract
During the last decades the quantitative description of electrical and magnetotransport properties of solid-state materials has been a remarkable challenge in materials science. Recently, the discovery of a novel class of materials, the topological semimetals, has led to a growing interest for the full understanding of their magnetotransport properties. In this review, the strong interplay among topology, band structure and carrier mobility in recently discovered high carriers mobility topological semimetals is discussed and their effect on their magnetotransport properties is outlined. The huge magnetoresistance effect, especially in the Hall transverse configuration, and a new version of a three-dimensional quantum Hall effect observed in high-mobility Weyl and Dirac semimetals are reviewed. The design of novel quantum sensors based on solid-state semimetals is also encouraged.
Keywords
Topological semimetals, Band structure, Magnetotransport properties, Carrier mobility, Magnetoresistance sensors; Magnetoresistance effect; 3D quantum Hall effect
Subject
Physical Sciences, Condensed Matter Physics
Copyright:
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
