Mid-Infrared Complex Refractive Index Spectra of Polycrystalline Copper-Nitride Films by IR-VASE Ellipsometry and Their FIB-SEM Porosity

Emilio Márquez; Eduardo Blanco; Jose Manuel Manuel; Manuel Ballester; Marcos Garcia-Gurrea; Maria Isabel Rodriguez-Tapiador; Susana Maria Fernandez; Florian Willomitzer; Aggelos K. Katsaggelos

doi:10.20944/preprints202311.0544.v1

A peer-reviewed article of this Preprint also exists.

Márquez, E.; Blanco, E.; Mánuel, J.M.; Ballester, M.; García-Gurrea, M.; Rodríguez-Tapiador, M.I.; Fernández, S.M.; Willomitzer, F.; Katsaggelos, A.K. Mid-Infrared (MIR) Complex Refractive Index Spectra of Polycrystalline Copper-Nitride Films by IR-VASE Ellipsometry and Their FIB-SEM Porosity. Coatings 2024, 14, 5. Márquez, E.; Blanco, E.; Mánuel, J.M.; Ballester, M.; García-Gurrea, M.; Rodríguez-Tapiador, M.I.; Fernández, S.M.; Willomitzer, F.; Katsaggelos, A.K. Mid-Infrared (MIR) Complex Refractive Index Spectra of Polycrystalline Copper-Nitride Films by IR-VASE Ellipsometry and Their FIB-SEM Porosity. Coatings 2024, 14, 5.

Abstract

Copper-nitride (Cu3N) semiconductor material is attracting much attention as a potential, next-generation thin-film solar-light absorber in solar cells. In this communication, polycrystalline Cu3N thin films were prepared using reactive-RF-magnetron-sputtering deposition, at room temperature, onto glass and silicon substrates. The very-broadband optical properties of the Cu3N thin film layers were studied by UV-MIR (0.2-40 μm) ellipsometry and optical transmission, to be able to achieve the goal of a low-cost absorber material to replace the conventional silicon. The reactive-RF-sputtered Cu3N films were also investigated by focused ion beam scanning electron microscopy, and both FTIR and Raman spectroscopies.

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Mid-Infrared Complex Refractive Index Spectra of Polycrystalline Copper-Nitride Films by IR-VASE Ellipsometry and Their FIB-SEM Porosity

Abstract

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Subject

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