Version 1
: Received: 29 April 2024 / Approved: 30 April 2024 / Online: 1 May 2024 (04:05:59 CEST)
How to cite:
Kotomin, E.; Kuzovkov, V.; Lushchik, A.; Popov, A. I.; Shablonin, E.; Scherer, T.; Vasil’chenko, E. The Annealing Kinetics of Defects in CVD Diamond Irradiated by Xe Ions. Preprints2024, 2024042017. https://doi.org/10.20944/preprints202404.2017.v1
Kotomin, E.; Kuzovkov, V.; Lushchik, A.; Popov, A. I.; Shablonin, E.; Scherer, T.; Vasil’chenko, E. The Annealing Kinetics of Defects in CVD Diamond Irradiated by Xe Ions. Preprints 2024, 2024042017. https://doi.org/10.20944/preprints202404.2017.v1
Kotomin, E.; Kuzovkov, V.; Lushchik, A.; Popov, A. I.; Shablonin, E.; Scherer, T.; Vasil’chenko, E. The Annealing Kinetics of Defects in CVD Diamond Irradiated by Xe Ions. Preprints2024, 2024042017. https://doi.org/10.20944/preprints202404.2017.v1
APA Style
Kotomin, E., Kuzovkov, V., Lushchik, A., Popov, A. I., Shablonin, E., Scherer, T., & Vasil’chenko, E. (2024). The Annealing Kinetics of Defects in CVD Diamond Irradiated by Xe Ions. Preprints. https://doi.org/10.20944/preprints202404.2017.v1
Chicago/Turabian Style
Kotomin, E., Theo Scherer and Evgeni Vasil’chenko. 2024 "The Annealing Kinetics of Defects in CVD Diamond Irradiated by Xe Ions" Preprints. https://doi.org/10.20944/preprints202404.2017.v1
Abstract
The radiation-induced optical absorption at 1.5-5.5 eV (up to the beginning of fundamental absorption) has been analyzed in CVD diamond disks exposed to 231-MeV 132Xe ions with four fluences from 1012 to 3.81013 cm-2. The 5-mm diameter samples (thickness 0.4 mm) were prepared by Diamond Materials, Freiburg (Germany), average grain size at growth site was around 80 m, the range of xenon ions was R= 11.5 m. The intensity of several bands grows with ion fluence thus confirming radiation-induced origin of the defects responsible for these bands. The recovery of radiation damage has been investigated via isochronal (stepwise) thermal annealing procedure up to 650°C, while all spectra were measured at room temperature. Based on these spectra, the annealing kinetics of several defects, in particular carbon vacancies (GR1 centers with a broad band 2 eV) and complementary C-interstitial-related defects ( 4 eV), as well as vacancies located nearby nitrogen substitutional atoms (narrow bands around 2.5 eV) have been constructed. The experimental kinetics have also been analyzed in terms of the diffusion-controlled bimolecular reactions. The migration energies of tentatively interstitial atoms (mobile components in recombination process) are obtained, their dependence on the irradiation fluences is discussed.
Keywords
CVD diamond; swift heavy ions; irradiation; Xe; optical absorption; Frenkel defects; interstitial ions; thermal annealing; diffusion-controlled reactions
Subject
Chemistry and Materials Science, Inorganic and Nuclear Chemistry
Copyright:
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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