Version 1
: Received: 23 January 2024 / Approved: 24 January 2024 / Online: 25 January 2024 (10:06:20 CET)
How to cite:
Sen, S. Self-Consistent Solution of Schrödinger-Poisson Equations For Modeling Realistic Silicon Transistors. Preprints2024, 2024011819. https://doi.org/10.20944/preprints202401.1819.v1
Sen, S. Self-Consistent Solution of Schrödinger-Poisson Equations For Modeling Realistic Silicon Transistors. Preprints 2024, 2024011819. https://doi.org/10.20944/preprints202401.1819.v1
Sen, S. Self-Consistent Solution of Schrödinger-Poisson Equations For Modeling Realistic Silicon Transistors. Preprints2024, 2024011819. https://doi.org/10.20944/preprints202401.1819.v1
APA Style
Sen, S. (2024). Self-Consistent Solution of Schrödinger-Poisson Equations For Modeling Realistic Silicon Transistors. Preprints. https://doi.org/10.20944/preprints202401.1819.v1
Chicago/Turabian Style
Sen, S. 2024 "Self-Consistent Solution of Schrödinger-Poisson Equations For Modeling Realistic Silicon Transistors" Preprints. https://doi.org/10.20944/preprints202401.1819.v1
Abstract
With continued scaling of semiconductor devices , the value of predictive analysis through 1 accurate quantum transport modeling is exponentially increasing. Quantum transmitting Boundary 2 method (QTBM) has been a well-known method of choice to model quantum transport in simple 1-D 3 devices. Here, we present an extension of the QTBM to the 2-D domain and apply it for more realistic 4 devices for accurate performance analysis.
Engineering, Electrical and Electronic Engineering
Copyright:
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
