Wang, Z.; Lu, H.; Zhang, Y.; Liu, C. Ultrathin Encapsulation Strategies with Predefined Gate Dielectric Surface Area for Flexible Crystalline Silicon Nanomembrane-Based MOS Capacitors. Crystals2024, 14, 190.
Wang, Z.; Lu, H.; Zhang, Y.; Liu, C. Ultrathin Encapsulation Strategies with Predefined Gate Dielectric Surface Area for Flexible Crystalline Silicon Nanomembrane-Based MOS Capacitors. Crystals 2024, 14, 190.
Wang, Z.; Lu, H.; Zhang, Y.; Liu, C. Ultrathin Encapsulation Strategies with Predefined Gate Dielectric Surface Area for Flexible Crystalline Silicon Nanomembrane-Based MOS Capacitors. Crystals2024, 14, 190.
Wang, Z.; Lu, H.; Zhang, Y.; Liu, C. Ultrathin Encapsulation Strategies with Predefined Gate Dielectric Surface Area for Flexible Crystalline Silicon Nanomembrane-Based MOS Capacitors. Crystals 2024, 14, 190.
Abstract
Crystalline silicon nanomembrane (Si NM) is promising in wearable and implantable bioelectronics due to its electrical and mechanical performances. However, the current explorations are not enough to firmly bridge ultrathin encapsulation strategies with high performance crystalline Si NM based transistors. In this work, we utilized Al2O3/alucone as the ultrathin encapsulation strategies aim to thoroughly investigate the effect of gate dielectric surface area on the electrical performance of crystalline Si NM based metal-oxide-semiconductor capacitors (MOSCAPs). The comparative analysis was implemented on the three types of diameters (Ø) MOSCAPs with and without Al2O3/alucone encapsulation under planar and concave/convex bending conditions. Benefited from the Al2O3/alucone ultrathin encapsulations, the stability of gate leakage current density, and interfacial characteristics were maintained and improved under mechanical bending deformations for MOSCAPs with predefined Ø of 160, 240, and 320 μm compared to the bare MOSCAPs. Combined with the Ø-related mechanical analysis on the maximum strain in the critical layers and the practical measurements, the encapsulated MOSCAPs with Ø 160 μm showed the most stable electro-mechanical performances. The variations for encapsulated MOSCAPs with three types of Ø emerged in the oxide layer and the interface at dielectric/Si NM that were carefully evaluated according to the bending deformations. These findings are significant for leveraging the practical applications in the ultrathin encapsulation strategies for reliable operations of crystalline Si NM based integrated circuits (ICs).
Keywords
ultrathin encapsulation; silicon nanomembrane; metal-oxide-semiconductor capacitors; gate dielectric surface area
Subject
Engineering, Electrical and Electronic Engineering
Copyright:
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
