Version 1
: Received: 8 August 2023 / Approved: 9 August 2023 / Online: 9 August 2023 (16:24:50 CEST)
How to cite:
Rizzo, S. A.; Salerno, N.; Scuto, A.; Sorrentino, G. Analysis of Turn-Off Losses in MOSFETs Equipped with the Kelvin Source. Preprints2023, 2023080787. https://doi.org/10.20944/preprints202308.0787.v1
Rizzo, S. A.; Salerno, N.; Scuto, A.; Sorrentino, G. Analysis of Turn-Off Losses in MOSFETs Equipped with the Kelvin Source. Preprints 2023, 2023080787. https://doi.org/10.20944/preprints202308.0787.v1
Rizzo, S. A.; Salerno, N.; Scuto, A.; Sorrentino, G. Analysis of Turn-Off Losses in MOSFETs Equipped with the Kelvin Source. Preprints2023, 2023080787. https://doi.org/10.20944/preprints202308.0787.v1
APA Style
Rizzo, S. A., Salerno, N., Scuto, A., & Sorrentino, G. (2023). Analysis of Turn-Off Losses in MOSFETs Equipped with the Kelvin Source. Preprints. https://doi.org/10.20944/preprints202308.0787.v1
Chicago/Turabian Style
Rizzo, S. A., Alfio Scuto and Giuseppe Sorrentino. 2023 "Analysis of Turn-Off Losses in MOSFETs Equipped with the Kelvin Source" Preprints. https://doi.org/10.20944/preprints202308.0787.v1
Abstract
The paper first compares the turn-off performance of two package solutions (3-lead vs 4-lead) in Super-Junction MOSFETs. It is commonly assumed that the better performance (lower switching losses) of the 4-lead is obtained thanks to the decoupling of the power and driving loop. On the contrary, in this work, the experimental results, circuit models, and Kirchhoff laws have shown that the turn-off improvement (lower turn-off losses) obtained by adopting the Kelvin source is due to the lower inductance of the driver loop in comparison with the power loop inductance, instead of the decoupling between these loops.
Engineering, Electrical and Electronic Engineering
Copyright:
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
