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Investigation of oxygen behavior under different melt flow, diffusion boundary layer and crystal-melt interface in a 300mm silicon crystal growth with CUSP magnetic field
Sun, C.; Ai, X.; Zhang, H.; Chou, H.; Lyu, H.; Chen, G. Investigation of Oxygen Behavior under Different Melt Flow, Diffusion Boundary Layer, and Crystal-Melt Interface in a 300 mm Silicon Crystal Growth with Cusp Magnetic Field. Coatings2023, 13, 1634.
Sun, C.; Ai, X.; Zhang, H.; Chou, H.; Lyu, H.; Chen, G. Investigation of Oxygen Behavior under Different Melt Flow, Diffusion Boundary Layer, and Crystal-Melt Interface in a 300 mm Silicon Crystal Growth with Cusp Magnetic Field. Coatings 2023, 13, 1634.
Sun, C.; Ai, X.; Zhang, H.; Chou, H.; Lyu, H.; Chen, G. Investigation of Oxygen Behavior under Different Melt Flow, Diffusion Boundary Layer, and Crystal-Melt Interface in a 300 mm Silicon Crystal Growth with Cusp Magnetic Field. Coatings2023, 13, 1634.
Sun, C.; Ai, X.; Zhang, H.; Chou, H.; Lyu, H.; Chen, G. Investigation of Oxygen Behavior under Different Melt Flow, Diffusion Boundary Layer, and Crystal-Melt Interface in a 300 mm Silicon Crystal Growth with Cusp Magnetic Field. Coatings 2023, 13, 1634.
Abstract
: The silicon single crystals for semiconductor application is usually grown by Czochralski (CZ) method. This paper researches 300mm silicon Czochralski (CZ) crystal growth with CUSP magnetic field for IGBTs substrate application. The different positions of Zero-Gauss plane (ZGP) under CUSP magnetic field are simulated and compared to numerical analysis, investigated melt convection, melt flow velocity near to quartz crucible wall, diffusion boundary layer and effect of initial oxygen concentration in the silicon crystal, and the shape of solid/liquid interface was discussed. The results show that the change of the ZGP of the CMF mainly affects the convection in the melt, which leads to the difference of the thickness of the boundary layer near to the wall of the quartz crucible, and was found to be the key to reduce the oxygen dissolution from the crucible wall and oxygen diffuse into the crystal, along with the differences in the shape of the crystal-melt interface. In addition, we have carried out actual industrial single crystal production under the three configurations. The results show that the experimental data of oxygen content and shape of the crystal-melt interfaces in silicon crystal are consistent with the numerical results.
Keywords
Zero-Gauss plane; CUSP-magnetic field (CMF), crystal-melt interface; Magnetic Czochralski method
Subject
Chemistry and Materials Science, Materials Science and Technology
Copyright:
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
