Version 1
: Received: 8 May 2023 / Approved: 9 May 2023 / Online: 9 May 2023 (07:30:46 CEST)
How to cite:
Ju, J.; Yang, B.; Niu, C.; Li, X. A Study on Electrothermal Characteristics of ESD Protection Devices Based on ggNMOS. Preprints2023, 2023050584. https://doi.org/10.20944/preprints202305.0584.v1
Ju, J.; Yang, B.; Niu, C.; Li, X. A Study on Electrothermal Characteristics of ESD Protection Devices Based on ggNMOS. Preprints 2023, 2023050584. https://doi.org/10.20944/preprints202305.0584.v1
Ju, J.; Yang, B.; Niu, C.; Li, X. A Study on Electrothermal Characteristics of ESD Protection Devices Based on ggNMOS. Preprints2023, 2023050584. https://doi.org/10.20944/preprints202305.0584.v1
APA Style
Ju, J., Yang, B., Niu, C., & Li, X. (2023). A Study on Electrothermal Characteristics of ESD Protection Devices Based on ggNMOS. Preprints. https://doi.org/10.20944/preprints202305.0584.v1
Chicago/Turabian Style
Ju, J., Chang-Liu Niu and Xue-ying Li. 2023 "A Study on Electrothermal Characteristics of ESD Protection Devices Based on ggNMOS" Preprints. https://doi.org/10.20944/preprints202305.0584.v1
Abstract
To study the influence of electrothermal effect of ESD protection device on the reliability of inte-grated circuit,a theoretical model of ESD protection device thermal resistance is constructed in the paper based on the Conservation of Energy Principle. By analyzing the temperature relativity between electricity parameter and thermology parameter of ESD protection device characterized by self-heating thermal resistance, the quantitative relationship expression of physical parameter and geometric parameter is obtained, which can be used to improve ESD protection device elec-tro-thermal effect. The simulation testing and the real tape-out testing of ESD protection device self-heating thermal resistance based on ggNMOS are shown and compared. It is concluded that self-heating thermal resistance is an effective index for the protection device electrothermal char-acterization. Based on the established model, the self-heating thermal resistance could be decreased to improve the homogeneity of the heat transference. The uneven distribution of device temperature can be reduced, and the overall reliability of chips can be improved.
Keywords
electrostatic discharge; grounded-gate N-channel metal oxide semiconductor; electrothermal characteristic
Subject
Physical Sciences, Applied Physics
Copyright:
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
