Article
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Development of Nitride-Sensors for Monitoring in Control Systems
Version 1
: Received: 16 May 2019 / Approved: 17 May 2019 / Online: 17 May 2019 (16:16:22 CEST)
How to cite: Krishan, M.; Alkhawaldeh, A.; Soliman, A. Development of Nitride-Sensors for Monitoring in Control Systems. Preprints 2019, 2019050227 Krishan, M.; Alkhawaldeh, A.; Soliman, A. Development of Nitride-Sensors for Monitoring in Control Systems. Preprints 2019, 2019050227
Abstract
Sensors became integrated through the control condition arrangement, either for visual, mechanical, biological, or chemical applications. New stuff is designed for detection, as Diluted Magnetic Semiconductors (DMS), and are considered attractive candidates that consist of a traditional 111- V, II-VI, or group IV semiconductor. Manganese Mn-doped GaN (Mn.Gac.N) epitaxial velum has a unique magnetic, visual and chemical properties in order to control system intelligent for detector design. The subject area of the magnetic properties of MnxGal-xN is on a large scale available, there are only a few studies on the visual properties and electrochemical properties of MnxGal-xN epitaxial velums. Where MnGaN velums were used in spintronic and opto-electronic applications according to their magnetic characterization and constructed MnGaN electrode are drop fabric potential for potentiometric sensor applications since they have good performance as ion-selective electrodes. The electrical and magnetic properties that allow the control of electron spin as well as complaint period, makes the materials ideal for spintronic applications. Designing such spintronic and optoelectronic devices based on MnxGal-xN requires a broader agreement of physical, visual, electrical and chemical properties epitaxial velums that are still seldom in the literature. This bailiwick displays the potential use of MnGaN semiconductor as an all solid-state potentiometric sensor for measuring anions in solutions in the control engineering field.
Keywords
Diluted magnetic semiconductors (DMS), Manganese Mn-doped GaN (Mn.Gac.N), Spintronic, Opto-electronic devices
Subject
Chemistry and Materials Science, Applied Chemistry
Copyright: This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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