Preprint Article Version 1 NOT YET PEER-REVIEWED

Evaluation of the Impact of TMIn Flow Rate on the Structural and Optical Properties of InN/ZnO Heterojunctions Using RF-MOMBE

  1. Instrument Technology Research Center, National Applied Research Laboratories, Hsinchu 300, Taiwan
  2. Department of Optics and Photonics, National Central University, Taoyuan 320, Taiwan
  3. Department of Electronic Engineering, Chang Gung University, Taoyuan 333, Taiwan
  4. Department of Nuclear Medicine, Chang Gung Memorial Hospital, Taoyuan 333, Taiwan
  5. Department of Photonics Engineering, Yuan-Ze University, Taoyuan 320, Taiwan
  6. Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan
Version 1 : Received: 20 September 2016 / Approved: 20 September 2016 / Online: 20 September 2016 (11:31:28 CEST)

How to cite: Chen, W.; Chen, H.; Kuo, S.; Lai, F.; Hsiao, C.; Lee, C. Evaluation of the Impact of TMIn Flow Rate on the Structural and Optical Properties of InN/ZnO Heterojunctions Using RF-MOMBE. Preprints 2016, 2016090069 (doi: 10.20944/preprints201609.0069.v1). Chen, W.; Chen, H.; Kuo, S.; Lai, F.; Hsiao, C.; Lee, C. Evaluation of the Impact of TMIn Flow Rate on the Structural and Optical Properties of InN/ZnO Heterojunctions Using RF-MOMBE. Preprints 2016, 2016090069 (doi: 10.20944/preprints201609.0069.v1).

Abstract

Indium nitride (InN) films were deposited on Al2O3 substrates with a zinc oxide (ZnO) buffer layer by radio-frequency metalorganic molecular beam epitaxy (RF-MOMBE). We evaluated the impact of the flow rate of trimethylindium (In(CH3)3, TMIn) on the structure, surface morphology, and optical and electrical properties of the films using X-ray diffraction, scanning electron microscopy (SEM), transmission electron microscopy (TEM), UV-Vis spectroscopy, and Hall measurements. The XRD results indicated that all InN films were formed from single-phase wurtzite crystals with preferred orientations along the c-axis. The SEM images indicated that the surfaces of the InN films were not smooth with TMIn flow rate at 0.55 sccm. The TEM images showed that InN and ZnO had hexagonal structures (wurtzite) that were epitaxially grown by RF-MOMBE on the substrates. The electron concentrations of the InN films ranged from 7.3×1019 to 2.56×1020 cm−3.

Subject Areas

InN; ZnO; RF-MOMBE

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