Schiavon, D.; Litwin-Staszewska, E.; Jakieła, R.; Grzanka, S.; Perlin, P. Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium. Materials2021, 14, 354.
Schiavon, D.; Litwin-Staszewska, E.; Jakieła, R.; Grzanka, S.; Perlin, P. Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium. Materials 2021, 14, 354.
Schiavon, D.; Litwin-Staszewska, E.; Jakieła, R.; Grzanka, S.; Perlin, P. Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium. Materials2021, 14, 354.
Schiavon, D.; Litwin-Staszewska, E.; Jakieła, R.; Grzanka, S.; Perlin, P. Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium. Materials 2021, 14, 354.
Abstract
The effect of growth temperature and precursor flows on the doping level and surface morphology of Ge-doped GaN layers was researched. The results show that germanium is more readily incorporated at low temperature, high growth rate and high V/III ratio, thus revealing a similar behavior to what was previously observed for indium. V-pit formation can be blocked at high temperature but also at low V/III ratio, the latter of which however causing step bunching.
Engineering, Electrical and Electronic Engineering
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