Version 1
: Received: 27 October 2020 / Approved: 28 October 2020 / Online: 28 October 2020 (14:38:01 CET)
How to cite:
Landi, A.; Vinciguerra, V. Extension of the Stoney Equation for a Taiko Wafer (Si and SiC). Preprints2020, 2020100594. https://doi.org/10.20944/preprints202010.0594.v1
Landi, A.; Vinciguerra, V. Extension of the Stoney Equation for a Taiko Wafer (Si and SiC). Preprints 2020, 2020100594. https://doi.org/10.20944/preprints202010.0594.v1
Landi, A.; Vinciguerra, V. Extension of the Stoney Equation for a Taiko Wafer (Si and SiC). Preprints2020, 2020100594. https://doi.org/10.20944/preprints202010.0594.v1
APA Style
Landi, A., & Vinciguerra, V. (2020). <strong>Extension of the Stoney Equation for a Taiko Wafer (Si and SiC)</strong>. Preprints. https://doi.org/10.20944/preprints202010.0594.v1
Chicago/Turabian Style
Landi, A. and Vincenzo Vinciguerra. 2020 "<strong>Extension of the Stoney Equation for a Taiko Wafer (Si and SiC)</strong>" Preprints. https://doi.org/10.20944/preprints202010.0594.v1
Abstract
An extension of the Stoney formula for the case of a back side metallized 8” silicon taiko wafer has been developed, in the elastic regime, within the frame of the theory of elasticity. A good correlation between the calculated warpage, determined by the stress released by a given back side metallization (BSM), and the corresponding experimental warpages of the same thick metal layers deposited on an 8” silicon taiko wafer provides evidences of the correctness of the developed theory. This development suggests the possibility to extend this approach to the case of 8” taiko wafers based on a wide band gap semiconductor such as silicon carbide (SiC).
Copyright:
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
