Black-Si as Photoelectrode

Denver Linklater; Fatima Haydous; Cheng Xi; Daniele Pergolesi; Jingwen Hu; Elena Ivanova; Saulius Juodkazis; Thomas Lippert; Jurga Juodkazyte

doi:10.20944/preprints202004.0169.v1

Preprint Article Version 1 Preserved in Portico This version is not peer-reviewed

Version 1 : Received: 6 April 2020 / Approved: 10 April 2020 / Online: 10 April 2020 (07:51:31 CEST)

The fabrication and characterisation of photo-anodes based on black-Si (b-Si) are presented using a photo-electrochemical cell in NaOH solution. Black-Si was fabricated by maskless dry plasma etching and was conformally coated by tens-of-nm of TiO2 using atomic layer deposition (ALD) with a top layer of CoO_x cocatalyst deposited by pulsed laser deposition (PLD). Low reﬂectivity R < % of Black-Si over the entire visible and near-IR (λ < 2 µm) spectral range is favourable in better absorption of light while an increased surface area facilities larger current densities. Photoelectrochemical performance of the heterostructured photoanode is discussed in terms of n-n junction between b-Si and TiO₂.

black Si; antireﬂection; photo-anode; water splitting9

Chemistry and Materials Science, Electrochemistry

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Black-Si as Photoelectrode

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