Version 1
: Received: 28 July 2017 / Approved: 28 July 2017 / Online: 28 July 2017 (12:44:55 CEST)
How to cite:
Zabeli, M.; Caka, N.; Limani, M.; Kabashi, Q. Role of MOSFETs Transconductance Parameters and Threshold Voltage in CMOS Inverter Behavior in DC Mode. Preprints2017, 2017070084. https://doi.org/10.20944/preprints201707.0084.v1
Zabeli, M.; Caka, N.; Limani, M.; Kabashi, Q. Role of MOSFETs Transconductance Parameters and Threshold Voltage in CMOS Inverter Behavior in DC Mode. Preprints 2017, 2017070084. https://doi.org/10.20944/preprints201707.0084.v1
Zabeli, M.; Caka, N.; Limani, M.; Kabashi, Q. Role of MOSFETs Transconductance Parameters and Threshold Voltage in CMOS Inverter Behavior in DC Mode. Preprints2017, 2017070084. https://doi.org/10.20944/preprints201707.0084.v1
APA Style
Zabeli, M., Caka, N., Limani, M., & Kabashi, Q. (2017). Role of MOSFETs Transconductance Parameters and Threshold Voltage in CMOS Inverter Behavior in DC Mode. Preprints. https://doi.org/10.20944/preprints201707.0084.v1
Chicago/Turabian Style
Zabeli, M., Myzafere Limani and Qamil Kabashi. 2017 "Role of MOSFETs Transconductance Parameters and Threshold Voltage in CMOS Inverter Behavior in DC Mode" Preprints. https://doi.org/10.20944/preprints201707.0084.v1
Abstract
The objective of thispaper is toresearchtheimpact ofelectrical and physical parameters thatcharacterizethe complementary MOSFETtransistors (NMOS and PMOS transistors) in the CMOS inverter for static mode of operation. In addition to this, the paper also aims at exploring the directivesthatare tobefollowedduringthedesignphase of the CMOS invertersthat enabledesignersto design the CMOS inverters with the best possibleperformance, dependingonoperation conditions. The CMOS inverter designed withthe best possiblefeaturesalsoenablesthedesigning of the CMOS logic circuitswiththe best possibleperformance, according to the operation conditions and designers’ requirements.
Keywords
CMOS inverter; NMOS transistor; PMOS transistor; voltage transfer characteristic (VTC), threshold voltage; voltage critical value; noise margins; NMOS transconductance parameter; PMOS transconductance parameter
Subject
Engineering, Electrical and Electronic Engineering
Copyright:
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.