Magnetron sputtering was used for producing Titanium Vanadium Nitride (TiVN) coatings on a variety of substrates. In this research, we investigate how changing the sputtering power and nitrogen: argon (N2:Ar) gas ratio affects the structural and tribological properties of TiVN coatings. Scanning Electron Microscope (SEM) technique was used to examine TiVN coating surface morphology. Both variants showed a gradual increase in the intensity of the TiVN coating's (111) and (222) peaks. TiVN coating's tribological properties were examined using a pin-on-disc tribometer with varying loads, speeds, and sliding distances. The wear rates of TiVN-coated brass pins were in the range of 2.5×10-4 to 9.14×10-4 mm3/Nm depending on load, sliding distance, and gas ratio variation, when compared to the wear rates of TiVN-coated brass pins deposited at various power, which ranged from 1.76×10-3 to 5.87×10-3 mm3/Nm.

Demand for development of the convergence industry, research studies on electrical conductivity, thermal characteristics, semiconductors, motors, and batteries using special materials have come to the fore. Meanwhile, molybdenum (Mo) exhibits relatively small inorganic qualities, and the thermal conductivity rate is applied to various fields. In this study, in-depth characteristics were considered regarding the concentration of thermal characteristics, IR car terminal characteristics, and IR ve-hicles. This study calculated each phase temperature of the molybdenum sputtered specimens in the steady state according to the heat transfer theory. When the molybdenum-sputtered fabric’s metal layer pointed to the outside air, the heat transfer rate (Q) was high at 5748.3W, In contrast, if the molybdenum sputtered film’s metal layer of the pointed toward the heat source, the heat transfer rate (Q) was low at 187.1W. As a result of measuring the IR transmittance, the infrared transmit-tance of the molybdenum sputtering-treated sample was significantly reduced compared to the untreated sample. In the case of untreated samples, the transmittance ranged from 92.7 to 42.0%. When only the cross part was treated with molybdenum sputtering and the molybdenum surface was directed toward the IR irradiator, the IR transmittance was 66.8~0.7%. It is believed that the molybdenum sputtering polyamide samples produced in this study can be applied to multifunc-tional military wear, biosignal detection sensors, semiconductor products, batteries, etc., by utilizing excellent electrical properties, stealth functions, IR blocking properties, and lightness for infrared thermal imaging detectors.

Rapid sampling and multicomponent analysis are vital in the analysis of pesticide residue detection. In this work, we proposed a SERS platform to simultaneously detect three kinds of pesticides on apple peels by a straightforward “press and peel off” method. The flexible Au/dragonfly wing (Au/DW) substrate was obtained from sputtering Au nanoislands on dragonfly wing bioscaffold arrays by a simple DC magnetron sputtering system. The high-performance substrate exhibited a low limit of detection (LOD) to 4-aminothiophenol (4-ATP) (10^-9 M), outstanding reproducibility (less than 12.15%), good stability and suitability in multifold pesticide residues detection. Considering its excellent sample collection efficiency, the Au/DW substrate was employed to solve critical pesticide residues problems for detection of acephate (APT), cypermethrin (CPT), tsumacide (MTMC) and their multiple components on apple peels. The results show that the LOD was 10^-3 ng/cm² for APT obtained on the apple surface with a calculation equation of y=0.26x+6.68 and a correlation coefficient (R²) of 0.970. Additionally, the LOD values for CPT and MTMC were 10^-3 ng/cm² and 10^-4 ng/cm², respectively. The finding in this work may provide a promising biomimetic SERS platform for on-spot detection of other organic pollutants in the food industry and the environmental protection.

Polymer-derived ceramic (PDC) based coatings like Si-C-N and their derivatives are gaining importance day by day in N/MEMS and aerospace due to their thermos-mechanical stability and conductivity. The crystallized, amorphous, and near amorphous morphology of SiCN nanocomposite coatings based on deposition conditions requires thorough investigation for appropriate utilization as they lead to differences in mechanical properties (quantified using nanoindentation in this case). A 4-stage model was proposed based on Raman spectroscopy due to the N₂-Ar pressure variations during the deposition process of SiCN coatings by magnetron sputtering. The integral intensity of the G (graphitic), disorder (D), and tetrahedral (T) peaks namely I_G, I_D, and I_T were calculated after the deconvolution of the spectra. The sp² domain size and defect parameters were evaluated and correlated with the hardness and different bond formation involving Si, C, and N. Image analysis revealed the atomic migration involved during the growth process leading to crystallization along with the formation of voids and defects. The observations were supported by FTIR and TEM-SAED analysis. The outcomes provide a foundation causing an urge to develop similar models with further elemental additions and correlate with various physical properties.

Copper nitride (Cu3N), a metastable semiconductor material, but with reasonably-high-stability at room temperature, is drawing a great deal of attention as a very promising next-generation, earth-abundant, thin-film solar absorber. Its non-toxicity, on the other hand, makes it a very attractive eco-friendly semiconducting material. In the present work, Cu3N thin films were grown by employing radio-frequency magnetron sputtering, at room temperature, with 50-W RF-power, and partial nitrogen pressures of 8.0 and 1.0, onto glass substrates. Thus, the influence of argon on the optical properties of the Cu3N thin films was studied, with the goal of being able to achieve a low-cost, light absorber material, with appropriate properties in order to substitute the more conventional silicon, in photovoltaic cells. Variable-angle spectroscopic ellipsometry measurements have been conducted at three angles, 50∘, 60∘, and 70∘, respectively, in order to obtain the two ellipsometric parameters psi, ψ, and delta, Δ, respectively. For the constructed optical model, the bulk planar Cu3N layer is described by a one-dimensional graded-index model, combine with the mixture of a Tauc-Lorentz oscillator and up to four Gaussian oscillators, whereas a BEMA model with 50%-air-void is adopted in order to account for the existing surface-roughness layer. In addition, the optical properties such as the energy-band gap, and refractive index and absorption coefficient, were determined in order to assess the actual capability of this material as a light absorber for solar cells. The direct and indirect band gap energies were accurately calculated, and they were found to be in the ranges of 2.14-2.21 eV and very clse to 1.50 eV, respectively.

With the decline in fossil fuels, hydrogen-based alternatives provide a reliable and clean source for sustainable energy generation. In these endeavors, photochemical splitting for hydrogen production through tandem cells has been the source of much theoretical and experimental research in science. Much focus has been placed on interfacial band gap engineering as one of the most promising routes in the generation of hydrogen.This present work explores sputtering of n-silicon to form the active electrode in a n-Si | n-TiO₂ tandem cell and investigates the effect of variations in sputtering and post sputtering treatment parameters (rapid thermal annealing and long cycle annealing) for successful deposition of crystalline Silicon. The samples were successfully characterized via Raman Spectroscopy, X-ray Diffraction and Optical Transmission Spectroscopy to ascertain prevalent crystalline order and optical band gap, under different sputtering and post-sputtering conditions. Relevant conclusions were drawn to ascertain the best possible deposition parameters of n-Si for photocatalytic water splitting.

This study focuses on the analyses of nano-twinned Copper (Cu) films deposited through magnetron sputtering on Silicon Carbide (SiC) chips. The investigation encompasses the utilization of Chromium (Cr) adhesive layer coupled with varying voltage bias conditions. The goal is to comprehensively examine the influence of adhesive layer and negative bias voltages, contributing to an enhanced understanding of materials engineering and bonding technologies for advanced applications. The formation of a nanotwinned structure and (111) surface orientation can be properly controlled by applied substrate bias. High density nanotwinned structures were introduced into Cu films sputtered on SiC substrates with 82.3% of (111)-orientation proportion at -150 V much higher than the Cu film sputtered with another substrate bias. It is concluded that the sputtered Cu nanotwinned film formed with -150 V bias voltage has the potential to be employed as the interlayer for low temperature direct bonding.

Nano- and micro-sized CeO2 surface layers based on titanium alloy TiAl6V4 were obtained by magnetron sputtering with or without subsequent annealing. The structure of the samples was determined using scanning electron microscopy, Auger electron spectroscopy, energy dispersive spectroscopy, and X-ray diffraction. Hardness was measured by sclerometry. A direct linear dependence of the thickness of the surface layers on the deposition time and an extreme dependence, passing through a maximum, on the power are shown. A decrease in hardness with an increase in the thickness of the cerium oxide coating was noted. An increase in surface roughness, delamination and loosening of the surface layer, presumably associated with annealing, were noted. In samples with a surface layer thinner than 715 nm without annealing and 750 nm after annealing, the formation of a sublayer of TiO2, Al2O3, and Ce(VO4) was found, and in annealed samples with a layer length of less than 300 nm, all cerium dioxide reacted with vanadium dioxide to form vanadate.

We determined the optimal composition of reactive magnetron sputtered TiO2-SnO2 mixed layers for electrochromic purposes. We determined and mapped the composition and optical parameters by Spectroscopic Ellipsometry (SE). The Ti‐ and Sn‐ targets have been placed separately, and the Si-wafers on glass substrate (30 cm× 30 cm) were moved under the two separated targets (Ti and Sn) in Ar‐O2 plasma. Different (Effective Medium Approximation (EMA) and oscillator-type) op-tical models were used to obtain the composition maps and thickness of the sample layer. Scanning Electron Microscopy (SEM) with Energy-Dispersive X-ray Spectroscopy (EDS) has been used to check the SE results. The ’goodness’ of diverse optical models have been compared, according to the conditions of sample preparation. We show that in the case of molecular-level mixed layers 2‐Tauc‐Lorentz oscillator model is better than the Bruggeman Effective Medium Approximation (BEMA). The electrochromic properties of mixed metal oxides that deposited by reactive sputtering have been mapped, too.

The fabrication of thin-film multilayer structures by sputtering technique usually requires multi-cathode deposition machine. This study proposes a simpler approach based on the RF power modulation: silicon nitride (SiN$_x$) thin films were prepared by RF reactive sputtering in (Ar + N$_2$) atmosphere at room temperature. The samples were analyzed to highlight the effects of different deposition conditions on the morphological and optical properties of the films in the visible and near/mid-IR regions. The refractive index of the films was changed in the range of 1.5 - 2.5 (at $\lambda$=800 nm) by tuning the sputtering power. IR reflectance measurements revealed the absence of spurious (oxygen- or hydrogen-based) phases, while atomic force and scanning electron microscopies confirmed the presence of flat and defect-free samples surfaces.

ZnO films with Ti atoms incorporated (TZO) in a wide range (0-18 at. %) have been grown by reactive co-sputtering on silicon and glass substrates. The influence of the titanium incorporation in the ZnO matrix on the structural and optical characteristics of the samples has been determined by Rutherford backscattering spectroscopy (RBS), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). The results indicate that the samples with low Ti content (< 4 at. %) exhibit the wurtzite-like structure, with the Ti+4 ions substitutionally incorporated into the ZnO structure, forming Ti-doped ZnO films. In particular, very low concentration of Ti (<0.9 at. %) leads to a significant increase of the crystallinity of the TZO samples. Higher Ti contents give rise to a progressive amorphization of the wurtzite-like structure so samples with high Ti content (≥18at. %), displays an amorphous structure indicating the XPS analysis a predominance of Ti-O-Zn mixed oxides. The energy gap, obtained from absorption spectrophotometry, increases from 3.2 eV for pure ZnO films to 3.6 eV for those with the highest Ti content. Ti incorporation in the ZnO samples below 0.9 at. % rises both, the blue (380 nm) and green (550 nm) bands of the photoluminescence (PL) emission, thereby indicating a significant improvement of PL efficiency of the samples.

Cu,N-TiO₂ nanotube (Cu,N-TNT) is prepared through a novel magnetron sputtering and anodic oxidation method. Then the morphology, structure and physicochemical property of Cu,N-TNT was analyzed by XRD, SEM, TEM, EDX and UV-vis-DR. The results indicate that the evenly doped copper is beneficial to the transformation of the TNT from anatase to rutile and play a key role in the morphology of the Cu,N-TNT. The doped Cu and N in the TNT influence the growth orientation of the TiO₂ crystals, which result in the lattice distortion and wider the interplanar spacing 60s-Cu,N-TNT has less band gap and stronger absorption intensity in visible region than other Cu,N-TNT samples, which make the combination rate of photogenerated electron and photogenerated hole decrease greatly, thus beneficial to its physicochemical property.

In this paper, we present a study of various ZnO/SiO2-stacked thin film structures for flexible micro-energy harvesting devices. Two groups of micro-energy harvesting devices, SiO2/ZnO/SiO2 micro-energy generators (SZS-MGs) and ZnO/SiO2/ZnO micro-energy generators (ZSZ-MGs), were fabricated by stacking both SiO2 and ZnO thin films, and the resulting devices were characterized. With a particular interest in the fabrication of flexible devices, all the ZnO and SiO2 thin films were deposited on ITO-coated PEN substrates using an RF magnetron sputtering technique. The effects of the thickness and/or position of the SiO2 films on the device performance were investigated by observing the variations of output voltage in comparison with that of a control sample. As a result, compared to the ZnO single-layer device, all the ZSZ-MGs showed much better output voltages, while all the SZS-MG showed only slightly better output voltages. Among the ZSZ-MGs, the highest output voltages were obtained from the ZSZ-MGs where the SiO2 thin films were deposited using a deposition power of 150 W. Overall, the device performance seems to depend significantly on the position as well as the thickness of the SiO2 thin films in the ZnO/ SiO2-stacked multilayer structures, in addition to the processing conditions.

This review focuses on Cu/TiO2 sequentially and Cu-TiO2 co-sputtered catalytic/photocatalytic surfaces leading to bacterial inactivation discussing their stability, synthesis, adhesion and antibacterial kinetics. The intervention of TiO2, Cu and the synergic effect of Cu and TiO2 on films prepared by a colloidal approach and other techniques is also reviewed leading to bacterial inactivation. Processes in aerobic media and anaerobic media leading to bacterial loss of viability on multidrug resistant (MDR) pathogens, Gram-negative (-) and Gram-positive(+) bacteria are described. Insight is provided for the interfacial charge transfer mechanism under solar irradiation occurring between TiO2 and Cu. surface properties of 2D TiO2/Cu and TiO2-Cu films are correlated with the bacterial inactivation kinetics observed in the dark and under light. The intervention of these antibacterial sputtered surfaces in health-care facilities leading to MRSA-isolates is described in the dark and under the actinic light. The synergic intervention of the Cu and TiO2 films leading to bacterial inactivation prepared by direct current magnetron sputtering (DCMS), pulsed direct current magnetron sputtering (DCMSP) and highly ionized pulse plasma magnetron sputtering (HIPIMS) is reported in a detailed way.

In this paper, we have used magnetron sputtering to grow the high-quality GeSn layer on Ge (100) with Sn compositin up to 7%. The crystallinity of the GeSn layer is pretty good, and the strain relaxation degree of the GeSn layer is evaluated to be approximately 50%. The root mean square (RMS) value is 0.8 nm, and the averaged TDDs in the GeSn layer is 8.7×109 cm-2, which is obtained from the rocking curve of GeSn layer along (004) plane. PL measurement result shows the significant optical emission from the deposited high-quality GeSn layer, which also means that magnetron sputtering is an optional way to achieve the higher Sn composition GeSn luminescent material. To verify whether our deposited GeSn can used for optoelectronic devices, we fabricate the simple vertical p-i-n diode, and the room temperature current-voltage (I-V) characteristic was obtained. This result paves the way for future sputtered-GeSn optimization, which is critical for the optoelectronic application.

This paper reports the effect of silicon substrate orientation and aluminum nitride buffer layer deposited by molecular beam epitaxy on the growth of aluminum nitride thin films deposited by DC magnetron sputtering technique at low temperature. The structural analysis has revealed a strong (0001) fiber texture for both substrates Si (100) and (111) and a hetero-epitaxial growth on few nanometers AlN buffer layer grown by MBE on Si (111) substrate. SEM images and XRD characterization have shown an enhancement in AlN crystallinity thanks to AlN (MBE) buffer layer. Raman spectroscopy indicated that the AlN film was relaxed when it deposited on Si (111), in compression on Si (100) and under tension on AlN buffer layer grown by MBE/Si (111) substrates, respectively. The interface between Si (111) and AlN grown by MBE is abrupt and well defined; contrary to the interface between AlN deposited using PVD and AlN grown by MBE. Nevertheless, AlN hetero-epitaxial growth was obtained at low temperature (<250°C).

In this work, the ternary titanium, copper and silver (Ti-Cu-Ag) system is investigated as a potential candidate for the production of mechanically robust biomedical thin films. The coatings are produced by physical vapor deposition-magnetron sputtering (MS-PVD). The composite thin films are deposited on a silicon (100) substrate. The ratio between Ti and Cu was approximately kept one, with the variation of the Ag content between 10 and 35 at.%, while the power on the targets is changed during each deposition to get the desired Ag content. Thin film characterization is performed by x-ray diffraction (XRD), nanoindentation (modulus and hardness) and Atomic force microscopy to determine the surface topography. The residual stresses are measured by focused ion beam and digital image correlation method (FIB-DIC). The produced Ti-Cu-Ag thin films appear to be smooth, uniformly thick and exhibit amorphous structure for the Ag contents lower than 25 at.%, with a transition to partially crystalline structure for higher Ag concentrations. The Ti-Cu control film shows higher values of 124.5 GPa and 7.85 GPa for modulus and hardness respectively. There is a clear trend of continuous decrease in the modulus and hardness with the increase of Ag content, as lowest value of 105.5 GPa and 6 GPa for 35 at.% Ag containing thin films. In particular, a transition from the compressive (-36.5 MPa) to tensile residual stresses between 229 MPa and 288 MPa are observed with an increasing Ag content. The obtained results suggest that the Ag concentration should not exceed 25 at.%, in order to avoid an excessive reduction of the modulus and hardness with maintaining (at the same time) the potential for an increase of the antibacterial properties. In summary, Ti-Cu-Ag thin films shows characteristic mechanical properties that can be used to improve the properties of biomedical implants such as Ti-alloys and stainless steel.

An electrochemical sensing platinum nanoparticle in the tantalum electrode is provided by means of an Ion Beam Sputtering Deposition (IBSD). The electrode was made with a Pt solution, sputtered simultaneously with hydrochloric acid corrosion on tantalum substrate. In the study of heavy metal ions, for example, the platinum nanoparticle electrodes as prepared were used Square wavelength voltammetry (OSWV) Hg²⁺, Cu²⁺ and Ag²⁺. The porous electrodes were observed in a broader range by the Pt nanostructure electrode for heavy metal ions. Furthermore, the susceptibility to detection has been shown to be saturated as the thickness of the layer electrode exceeded 50 nm. For Hg²⁺ 0,003-1 M, for Cu²⁺ 0,005-3 M and for Ag²⁺ the linear detection scale is 0,009-4 M. There has also been good reusability and repeatability. In addition, a scan electron microscope (SEM) used to study platinum electrode forming process and nanostructure. This electrode will have interesting applications in sensing systems.

Today, contamination from heavy metals in the atmosphere is a global concern. Efficient detection techniques are therefore necessary if heavy metal exposure levels in different media are to be determined. The voltammetry method for in situ detection of heavy metal ions is a very sensitive electrochemical method. This thesis explores emerging developments in electrode alteration, materials production and experimental optimization. An electrochemical sensing platinum nanoparticle in the tantalum electrode is provided by means of an Ion Beam Sputtering Deposition (IBSD). The electrode was made with a Pt solution, sputtered simultaneously with hydrochloric acid corrosion on tantalum substrate. In the study of heavy metal ions, for example, the platinum nanoparticle electrodes as prepared were used Square wavelength voltammetry (OSWV) Hg²⁺, Cu²⁺ and Ag²⁺. The porous electrodes were observed in a broader range by the Pt nanostructure electrode for heavy metal ions. Furthermore, the susceptibility to detection has been shown to be saturated as the thickness of the layer electrode exceeded 50 nm. For Hg²⁺ 0,003-1 M, for Cu²⁺ 0,005-3 M and for Ag²⁺ the linear detection scale is 0,009-4 M. There has also been good reusability and repeatability. In addition, a scan electron microscope (SEM) used to study platinum electrode forming process and nanostructure. This electrode will have interesting applications in sensing systems.

Enhancement of mechanical properties by using TiN/TiCN/TiC multilayer thin films deposited on commercially pure cast Titanium (CP-Ti), Ti6Al4V and silicon (Si) substrates via magnetron sputtering technique was investigated in this study. The structural, chemical and mechanical properties of the coatings were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), nanoindentation and scratch test. Results of the XRD analysis showed reflections corresponded to FCC (1 1 1) cubic and polycrystalline structure for TiN/TiCN/TiC films. XPS analysis revealed formation of titanium nitride, titanium carbonitride and titanium carbide in the coatings. According to SEM images, the coatings demonstrated dense cross-sectional morphology and columnar structure as well as good adhesion to the substrate with a thickness of 1.77 μm deposited on silicon (1 0 0). Scratch and nanoindentation test results showed the best mechanical behavior for the coated Ti6Al4V substrate material with the 19.96 GPa hardness and 25 N critical load values, because of its higher hardness and toughness of substrate in compared to Cp-Ti substrate.

Enhancement of mechanical properties by using TiN/TiCN/TiC multilayer thin films deposited on commercially pure cast Titanium (CP-Ti), Ti6Al4V and silicon (Si) substrates via magnetron sputtering technique was investigated in this study. The structural, chemical and mechanical properties of the coatings were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), nanoindentation and scratch test. Results of the XRD analysis showed reflections corresponded to FCC (1 1 1) cubic and polycrystalline structure for TiN/TiCN/TiC films. XPS analysis revealed formation of titanium nitride, titanium carbonitride and titanium carbide in the coatings. According to SEM images, the coatings demonstrated dense cross-sectional morphology and columnar structure as well as good adhesion to the substrate with a thickness of 1.77 μm deposited on silicon (1 0 0). Scratch and nanoindentation test results showed the best mechanical behavior for the coated Ti6Al4V substrate material with the 19.96 GPa hardness and 25 N critical load values, because of its higher hardness and toughness of substrate in compared to Cp-Ti substrate.

In this work, Al-Mo-B(CN) thin coatings were deposited by magnetron sputtering using composite metal-ceramic Al-Mo-B4C target. A metal-ceramic composite target for magnetron sputtering was fabricated by a robotic complex for detonation spraying of coatings equipped with a multi-chamber detonation accelerator. The powder composition (30Mo-30Al-40B4C) was sprayed onto the copper plate base of the composite target-cathode. The obtained cathode target with Al-Mo-B4C coating (thickness 280-300 μm) was used to deposit the Al-Mo-B(CN) coating (DC mode) on flat specimens of AISI 316 steels and silicon using equipment for magnetron sputtering UNICOAT 200. The Al-Mo-B4C coating has a lamella-type structure with inclusions of boron car-bide particles the elemental composition is evenly distributed in the material. The structure and morphology of coatings were studied using methods of optical, scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray analysis (XRD), and X-ray photoelectron spectros-copy (XPS). Mechanical and tribological properties of the Al-Mo-B(CN) thin coatings were determined using methods of nanoindentation, scratch testing, and tribological testing under fluid-free friction regime at room temperature. The Al-Mo-B(CN) coating (thickness ~ 1 μm) exhibited a dense uniform fine-grained structure with no columnar elements and were well-adherent to the substrates after deposition. Al-Mo-B(CN) coating has a amorphous structure. XPS analysis confirmed the formation of the MoB2 and AlN phase with an admixture of oxygen in the form of aluminum oxide, molybdenum oxide and boron oxide. Al-Mo-B(CN) coating possess hardness of 13 GPa, elasticity modulus of 114 GPa, elastic recovery of 45%, and friction coefficient of 0.8 against steel 100 Cr6 ball. The failure mode occurring in the tested coatings was fatigue and abrasive. The adhesion strength of Al-Mo-B(CN) coating amounted to about 11 N, and the failure mode was cohesive associated with plastic deformation and formation of fatigue cracks in the coating material.

Titanium oxynitride thin films are deposited by DC reactive magnetron sputtering. A pure titanium target is sputtered in a reactive atmosphere composed of argon, oxygen and nitrogen gases. The oxygen mass flow rate as well as that of the nitrogen gas are both pulsed during the deposition time using an independent and rectangular signal for each reactive gas. A constant pulsing period T = 45 s is applied for both reactive gases and a delay time  of 34 s between N2 and O2 injection times is set for all depositions. Oxygen and nitrogen duty cycles are systematically and independently changed from 0 to 100% of their pulsing period. From real time measurements of the Ti target potential and total sputtering pressure, it is shown that the reactive process alternates between oxidized, nitrided and elemental sputtering modes as a function of the oxygen and nitrogen injection times. The full poisoning of the Ti target surface by oxygen and/or nitrogen can be avoided for some given ranges of O2 and N2 duty cycles. Deposition rates of titanium oxynitride films are substantially enhanced and can be adjusted between that of pure Ti and TiN films with a gradual transition of their optical transmittance in the visible range. These results support that titanium oxynitride compounds exhibiting absorbent to transparent behaviors can be precisely sputter-deposited by means of a two reactive gases pulsing process.

The electron Transport layer (ETL) plays a crucial role in solar cell technology, particularly in perovskite solar cells (PSCs), where nanostructured TiO2 films have been investigated as superior ETL’s compared to compact TiO2. In this study we explore the nanocolumnal growth of TiO2 in the anatase phase, for bilayer thin films by magnetron sputtering (MS) technique and glancing angle deposition (GLAD). By optimizing the growth parameters, we achieved the formation of TiO2 nanocolumns with a cross-sectional diameter ranging from 50 to 75 nm. The average thickness of the films exceeded 12.71 ± 0.5µm , while the filaments exhibited an inclination angle close to 70◦ , corresponding to the deposition angle. Furthermore, we observed a correlation between the quality of the initial layer and enhanced growth of the TiO2 nanocolumns.

The electrical performance of the back-channel etched Indium–Gallium–Zinc–Oxide (IGZO) thin-film transistors (TFTs) with copper (Cu) source and drain (S/D) which are patterned by a selective etchant was investigated. The Cu S/D were fabricated on molybdenum (Mo) layer to prevent the Cu diffusion to the active layer (IGZO). We deposited the Cu layer using thermal evaporation and performed the selective wet etching of Cu using non-acidic special etchant without damaging the IGZO active layer. We fabricated the IGZO TFTs and compare the performance in terms of linear and saturation region mobility, threshold voltage and ON current (ION). The IGZO TFTs with Mo/Cu S/D exhibits good electrical properties as the linear region mobility is 12.3 cm2/V-s, saturation region mobility is 11 cm2/V-s, threshold voltage is 1.2 V and ION is 3.16 x 10-6 A. We patterned all the layers by photolithography process. Finally, we introduced SiO2-ESL layer to protect the device from the external influence. The results show that the prevention of Cu and introduced ESL layer enhances the electrical properties of IGZO TFTs.

Tantalum oxide thin films are deposited by DC reactive magnetron sputtering from a tantalum metallic target and oxygen as reactive gas. The reactive gas pulsing process (RGPP) is implemented to produce TaOx compounds with tunable chemical compositions. The argon mass flow rate is maintained constant whereas that of the oxygen gas is pulsed during the deposition. A constant pulsing period T = 10 s is used and the introduction time of the oxygen gas, namely the tON injection time, is systematically changed from 0 to 100 % of the pulsing period T. As the tON injection time increases, the chemical composition of as-deposited TaOx films is continuously changed from pure metallic tantalum to the over-stoichiometric Ta2O5 material. Analysis of the crystallographic structure by X-ray diffraction shows that the films adopt the body-centered cubic structure (metallic Ta) for the lowest tON injection time values (oxygen stoichiometry x &lt; 1.0) and become amorphous for the longest tON injection times. It is shown that the tON injection time is a key parameter to produce either homogeneous tantalum oxides, or periodic Ta/TaOx multilayers with alternations close to 3 nm. Similarly, optical transmittance spectra of the film/glass substrate system are recorded in the visible region and the electrical conductivity of the films is measured vs. temperature. Both exhibit a gradual evolution from metallic (300K = 8.17105 S m-1 with a null optical transmittance in the visible range) to semi-conducting (300K = 1.97103 S m-1 with a semi-transparent behavior) and finally to dielectric properties (300K &lt; 10-5 S m-1 for interferential films) as a function of the oxygen concentration in the films.

Three-dimensional porous nanostructures made of noble metals represent novel class of nanomaterials promising for nonlinear nanooptics and sensors. Such nanostructures are typically fabricated using either reproducible yet time-consuming and costly multi-step lithography protocols or less reproducible chemical synthesis that involve liquid processing with toxic compounds. Here, we combined scalable nanosecond-laser ablation with advanced engineering of the chemical composition of thin substrate-supported Au films to produce nanobumps containing multiple nanopores inside. Most of the nanopores hidden beneath the nanobump surface can be further uncapped using gentle etching of the nanobumps by an Ar-ion beam to form functional 3D plasmonic nanosponges. The nanopores 10-150~nm in diameter were found to appear via laser-induced explosive evaporation/boiling and coalescence of the randomly arranged nucleation sites formed by nitrogen-rich areas of the Au films. Density of the nanopores can be controlled by the amount of the nitrogen in the Au films regulated in the process of their magnetron sputtering assisted with nitrogen-containing discharge gas.

We investigated layered titanium nitride (TiN) and aluminum nitride (AlN) for color glasses in Building Integrated Photovoltaic (BIPV) systems. AlN and TiN are among suitable and cost-effective optical materials to be used as thin multilayer films, owing to the significant difference in their refractive index. To fabricate the structure, we used radio frequency magnetron deposition method to achieve the target thickness uniformly. A simple, fast, and cheap fabrication method is achieved by depositing the multilayer films in a single sputtering chamber. It is demonstrated that a multilayer stack that allows light to move from a low refractive index layer to a high refractive index layer or vice-versa can effectively create various distinct color reflections for different film thicknesses and multilayer structures. It is investigated from simulation based on wave optics that, TiN/AlN multilayer offers better color design freedom and cheaper fabrication process as compared to AlN/TiN multilayer films. Blue, green, and yellow color glasses with optical transmittance of more than 80% was achieved by ITO coated glass/TiN/AlN multilayer films. This technology exhibits good potential in commercial BIPV system applications.

This article reports a novel and efficient method to synthesize graphene by thermal decomposition process. In this method, silicon carbide (SiC) thin films grown on Si(100) wafers with an AlN buffer layer were used as substrates. A CO₂ laser beam heating without vacuum or controlled atmosphere was applied for SiC thermal decomposition. The physical, chemical, morphological, and electrical properties of the laser-produced graphene were investigated for different laser energy densities. The results demonstrate that graphene was produced in form of small islands with quality, density and properties depending on the applied laser energy density. Furthermore, the produced graphene exhibits a sheet resistance characteristic similar to graphene grown on mono-crystalline SiC wafer, which indicates its potential for electronic device applications.

In this work, nanocomposite photoelectrodes of the TiO2/ Au composition were manufactured, in which the size of plasmonic Au nanoparticles was varied, and the morphology of the TiO2 layer, depending on the thickness, changed from an island to a continuous layer. The influence of the morphology of plasmonic Au nanoparticles and the TiO2 layer on the optical and photoelectrochemical characteristics of hybrid photoelectrodes was studied. It has been shown that continuous coating of Au nanoparticles with a TiO2 layer (layer thickness 10 and 15 nm) leads to a decrease in the photoelectric response, and the decrease in photocurrent density and photoconversion efficiency decreases in proportion to the thickness of the TiO2 layer. The indicated drop in characteristics when plasmonic particles are located under the TiO2 layer is presumably associated with the scattering and recombination of charge carriers in the semiconductor layer. The best performance was shown by a system in which large Au nanoparticles (10 nm) are coated with a 5 nm thick layer of titanium dioxide; in this geometry, Au nanoparticles are decorated with TiO2 nanoparticles, as a result of which the photoelectrode-electrolyte interface has a more complex structure.

Sputtered reactive multilayers applied as a heat source in electronic joining processes are an emerging technology. Their use promises low-stress assembly of components while improving the thermal contact and reducing the thermal resistance. Nanostructured surface modifications can significantly enhance adhesion and reliability of joints between different materials. This work examines reactive multilayer of nickel and aluminum, directly sputtered on nanostructured black silicon surfaces and compares their phase transformation with reference samples deposited on pristine silicon surface. The investigation of the quenched self-propagating reaction reveals a clear influence of the nanostructured surface on the prolongation of the phase transition. Rapid thermal annealing tests result in the formation of Al_1.1Ni_0.9 phase. The nanostructured interface seems to hinder the full transformation of the parent material. The surface modification improves the adhesion of the formed alloy on silicon surfaces and can possibly increase the reliability of joints based on reactive aluminum/nickel multilayer. The use of black silicon, a nanostructured surface modification, is thus a promising approach to realize reliable multi-material joints in complex systems.

Since 2007, at the Electron Science Research Institute (ESRI) nano-fabrication laboratories, Edith Cowan University, Australia, we have devoted research efforts to the synthesis and characterization of bismuth-containing ferrite-garnet-type thin-film magneto-optic (MO) materials of different compositions. We report on the development and properties of highly bismuth-substituted iron-garnet thin films prepared by using radio frequency (RF) magnetron sputtering. We study the process parameters associated with the RF magnetron sputter deposition technique and investigate the results of optimizing process parameters and implementing several special techniques including the fabrication of co-sputtered nanocomposite films, all-garnet multilayer structures, applying oxygen plasma treatment on amorphous garnet layers just after the deposition process, and designing modifications of the annealing crystallization process and regimes for achieving the best MO properties. We demonstrated significant improvement in MO properties of Bi-containing ferrite-type garnet thin-film materials, including record-high MO figures of merit and improved conventional and un-conventional hysteresis loops of Faraday rotation. The attractive optical, magnetic, and magneto-optic properties obtained in highly bismuth-substituted iron garnet thin-film materials of multiple composition types are relevant in the context of manufacturing next-generation ultra-fast optoelectronic devices, such as light intensity switches and modulators, high-speed flat panel displays, and high-sensitivity sensors.

: Sputtering of silicon in a Helium magnetron discharge (MS) has been reported as a bottom-up procedure to obtain He-charged silicon films (i.e. He nanobubbles encapsulated in a silicon matrix). The incorporation of heavier noble gases is demonstrated in this work with a synergistic effect producing increased Ne and Ar incorporations when using He-Ne and He-Ar gas mixtures in the MS process. Microstructural and chemical characterizations are reported by ion beam analysis (IBA) and scanning and transmission electron microscopies (SEM and TEM). In addition to gas incorporation, helium promotes the formation of larger nanobubbles. For the case of Ne high resolution X-ray photoelectron and absorption spectroscopies (XPS and XAS) are reported with remarkable dependence of the Ne 1s photoemission and the Ne K-edge absorption on the nanobubbles size and composition. The gas (He, Ne, Ar) charged thin films are proposed as “solid” targets for the characterization of spectroscopic properties of noble gases in a confined state without the need for cryogenics or high-pressure anvils devices. Also their use as targets for nuclear reaction studies is foreseen.

Compressive residual stresses in thin films can inhibit crack propagation under normal or sliding contact loading, with associated enhancement of the coating apparent toughness, load bearing capacity and wear resistance. This study investigates the influence of residual stress distributions on the thin film/substrate adhesion using a nanoindenter coupled with scanning electron microscope (SEM) investigations of indentation induced failure modes. Reactive and un-reactive magnetron sputtering with ion plating was used to coat a (100) silicon substrate with aluminum nitride (AlN) with and without an aluminum (Al) adhesion layer. The presence of an Al bond layer gives additional interfacial tensile stress because of the difference in thermal expansion coefficient. Additionally, a different magnitude of residual stresses in the AlN coating was achieved by changing the applied bias voltage onto the substrate. Wafer curvature method and incremental focused ion beam (FIB) milling, combined with high-resolution in situ scanning electron microscopy (SEM) imaging and full field strain analysis by digital image correlation (DIC), were used to measure the average and in-depth stress residual stress distribution in the produced coatings. The adhesion energy was then quantified by using a nanoindentation based model. Results demonstrate that the additional tensile residual stress in the aluminum adhesion layer decrease significantly the coating adhesion, even in presence of a higher compressive stress state in the AlN top-layer. Therefore, the coatings without Al-layer showed better adhesion because of a more homogeneous compressive residual stress in comparison with the coating having Al layer, even though both groups of coatings are produced under same bias voltage. Results are discussed, and some general suggestions are made on the correlation between coating/substrate property combination and the adhesion energy of multilayer stacks. The results suggested that Al bond-layer and inhomogeneous residual stresses affected the adhesion of AlN negatively to a substrate like silicon.

Surface-enhanced Raman spectroscopy (SERS) is commonly used for super-selective analysis through nanostructured silver layers in the environment, food quality, biomedicine, and materials science. To fabricate a high-sensitivity but more accessible device of SERS, dc magnetron sputtering technology was used to realize high sensitivity, low cost, stable deposition rate, and rapid mass production. This study investigated various thicknesses of a silver film ranging from 3.0 to 12.1 nm by field-emission-scanning-electron microscope, X-ray diffraction, and X-ray photoelectron spectroscopy. In the rhodamine 6G (R6G) testing irradiated by a He-Ne laser beam, the analytical enhancement factor (AEF) of 9.35x108, the limit of detection (LOD) of 10-8 M, and the relative standard deviation (RSD) of 1.61% were better than other SERS substrates fabricated by the same dc sputtering process because the results show that the 6 nm thickness silver layer has the highest sensitivity, stability, and lifetime. The paraquat and acetylcholine analytes were further investigated and high sensitivity was also achievable. The proposed SERS samples were evaluated and stored in a low humidity environment for up to forty weeks, and no spectrum attenuation could be detected. Soon, the proposed technology to fabricate high sensitivity, repeatability, and robust SERS substrate will be an optimized process technology in multiple applications.