This paper presents the design, fabrication and characterization of Schottky erbium/silicon photodetectors working at 1.55 µm. These erbium/silicon junctions are carefully characterized using both electric and optical measurements at room temperature. A Schottky barrier ΦB of ~673 meV is extrapolated; the photodetectors show external responsivity of 0.55 mA/W at room temperature under a 8 V of reverse bias applied. In addition, the device performance is discussed in terms of normalized noise and noise equivalent power. To the best of our knowledge, these are the first Er/Si photodetectors designed for operation in free space at 1.55 µm. The proposed devices will pave the way towards development of Er-based photodetectors and light sources to be monolithically integrated in the same silicon substrate and both operating at 1.55 µm.

In this work we theoretically investigate the responsivity/noise equivalent power (NEP) trade-off in graphene/semiconductor Schottky photodetectors (PDs) operating in the near-infrared regime and working at room temperature. Our analysis shows as the responsivity/NEP ratio is strongly dependent on the Schottky barrier height (SBH) of the junction and we derive a closed analytical formula for maximizing it. In addition, we theoretically discuss as the SBH is linked to the bias applied to the junction in order to show how these devices could be optimized in practice for different semiconductors. We discover that graphene/n-silicon (Si) Schottky PDs could be optimized at 1550nm showing a responsivity and NEP of 133mA/W and 500fW/Hz, respectively, by a low reverse bias of only 0.66V. Moreover, we show that graphene/n-germanium (Ge) Schottky PDs optimized in term of responsivity/NEP ratio could be employed at 2000nm with a responsivity and NEP of 233mA/W and 31pW/Hz, respectively. We believe that our insights are of great importance in the field of silicon photonics for the realization of Si-based PDs to be employed in power monitoring, lab-on-chip and environment monitoring applications.

Graphene/silicon (Si) heterojunction photodetectors are widely studied in detecting of optical signals from near-infrared to visible light. However, performance of the graphene/Si photodetectors is limited by defects created in the growth process and surface recombination at the interface. Herein, a remote plasma-enhanced chemical vapor deposition is introduced to directly grow graphene nanowalls (GNWs) at a low power, which can effectively improve the growth rate and reduce defects. Moreover, hafnium oxide (HfO2) grown by atomic layer deposition has been employed as an interfacial layer for the GNWs/Si heterojunction photodetector. It is shown that the high-k dielectric layer of HfO₂ acts as an electron blocking and hole transport layer, which minimizes the recombination and reduces dark current. By optimizing the thickness of HfO₂, an extremely low dark current of 3.85×10^(-10) A with a responsivity of 0.19 AW^(-1), as well as a specific detectivity of 1.38×10^12 Jones at zero bias can be obtained for the fabricated GNWs/HfO₂/Si photodetector. This work demonstrates a universal strategy to fabricate high-performance graphene/Si photodetectors.

In two-dimensional materials research, oxidation is usually considered as a common source for the degradation of electronic and optoelectronic devices or even device failure. However, in some cases a controlled oxidation can open the possibility to widely tune the band structure of 2D materials. In particular, we demonstrate the controlled oxidation of titanium trisulfide (TiS₃), a layered semiconductor that attracted much attention recently thanks to its quasi-1D electronic and optoelectronic properties and its direct bandgap of 1.1 eV. Heating TiS₃ in air above 300 °C gradually converts it into TiO₂, a semiconductor with a wide bandgap of 3.2 eV with applications in photo-electrochemistry and catalysis. In this work, we investigate the controlled thermal oxidation of individual TiS₃ nanoribbons and its influence on the optoelectronic properties of TiS₃-based photodetectors. We observe a step-wise change in the cut-off wavelength from its pristine value ~1000 nm to 450 nm after subjecting the TiS₃ devices to subsequent thermal treatment cycles. Ab-initio and many-body calculations confirm an increase of the bandgap of titanium oxysulfide (TiO_2-xS_x) when increasing the amount of oxygen and reducing the amount of sulfur.

Strained layer superlattice (SLS) material system is being considered for large format, small-pitch and low-cost focal plane arrays for different applications. To address difficulties associated to focal plane arrays fabrication arising from mesa-isolation etching or complex surface treatment/ passivation process, planar structures have been considered. In this work, the recent progress on planar SLS photodetector using ion-implantation for device isolation is presented. The devices are presented here are nBn and pBn heterostructure InAs/InAsSb SLS photodetector, where Zn and Si were chosen as the ion implants, respectively. The electrical and optical performance of the devices were compared along with comparison with mesa-etched device, to give deeper view of the device performance.

Carbon nanotubes have been attracting considerable interest among material scientists, physicists, chemists and engineers for almost 30 years. Owing to their high aspect ratio, coupled with remarkable mechanical, electronic and thermal properties, carbon nanotubes have found application in diverse fields. In this review, we will cover the work on carbon nanotubes used for sensing applications. In particular, we will see examples where carbon nanotubes act as main players in devices sensing biomolecules, gas, light or pressure changes. Furthermore, we will discuss how to improve the performance of carbon nanotube-based sensors after proper modification.

Near-infrared (NIR) photodetectors (PDs) have attracted much attention in noninvasive medical diagnosis and treatment. Especially, the self-filtered NIR PDs are highly demandable for tremendous biomedical application due to their strong ability in wavelength discrimination. In this work, we designed and then fabricated a Si micro-holes array/Graphene (Si MHA/Gr) van der Waals (vdW) Schottky NIR photodiode by using PbS quantum dots (QDs) coating. The device exhibits a unique self-filtered NIR response with a responsivity of 0.7 A/W at -1 V and a response time of 61 μs, which are higher than that without PbS QDs coating and even most of previous Si/Gr Schottky photodiodes. The light trapping of the Si MHA and the PbS QDs coating can be attributed to the high responsivity of the vdW photodiode. Furthermore, the presented NIR photodiode can also be integrated in photoplethysmography (PPG) for real-time heart-rate (HR) monitoring. The extracted HR is in great accord with the value measured with the patient monitor by analyzing the Fourier transform of the stable and reliable fingertip PPG waveform, suggesting its potential for practical applications.

Imaging lidars are one of the hottest topics in the optronics industry. The need to sense the surroundings of every autonomous vehicle has pushed forward a career to decide the final solution to be implemented. The diversity of state-of-the art approaches to the solution brings, however, a large uncertainty towards such decision. This results often in contradictory claims from different manufacturers and developers. Within this paper we intend to provide an introductory overview of the technology linked to imaging lidars for autonomous vehicles. We start with the main single-point measurement principles, and then present the different imaging strategies implemented 8 in the different solutions. An overview of the main components most frequently used in practice is also presented. Finally, a brief section on pending issues for lidar development has been included, 10 in order to discuss some of the problems which still need to be solved before an efficient final implementation.Beyond this introduction, the reader is provided with a detailed bibliography containing both relevant books and state of the art papers.