The Anderson insulating states in Au nanoparticle assembly are identified and studied under the application of magnetic fields and gate voltages. When the inter-nanoparticle tunneling resistance is smaller than the quantum resistance, the system showing zero Mott gap can be insulating at very low temperature. In contrast to Mott insulators, Anderson insulators exhibit great negative magnetoresistance, inferring charge de-localization in a strong magnetic field. When probed by the electrodes spaced by ~200 nm, they also exhibit interesting gate-modulated current similar to the multi-dot single electron transistors. These results reveal the formation of charge puddles due to interplay of disorder and quantum interference at low temperatures.

The detection of Dark Matter is the greatest outstanding problem in modern cosmology. Several attempts have been taken for this without any remarkable success. To find out a suitable way of detection we need to understand its nature comprehensively. In the present article, a hypothesis is described considering Dark Matter as a normal matter. Its peculiar behavior is explained considering its existence in BEC state in the coolest part of the universe that makes it an electromagnetic insulator. Depending upon this hypothesis an experimental verification method is proposed.

Oncological changes in the prostate are a common cause of death among elderly men. Malignant cells are difficult to identify at early stages, which are asymptomatic. The patient often seeks medical assistance when the disease has already progressed, and the treatment is less effective. Early diagnosis of prostate cancer (PC) is thus one of the priority tasks of modern urology and healthcare in general. The aim of this study is the detection of microRNAs (miRNAs), which are known to be associated with PC. The detection of the target miRNAs in human plasma samples has been performed with a nanoribbon biosensor system, which was based on "silicon-on-insulator" structures (SOI-NR biosensor). In order to provide biospecific detection of the target miRNAs, the surface of individual nanoribbons has been modified with DNA oligonucleotide probes (oDNA probes), whose nucleotide sequences were complementary to those of the target miRNAs. The high detection sensitivity has been demonstrated with the use of model oDNAs, which are complementary to nanoribbon-immobilized oDNA probes, in buffer solutions. The sensitivity threshold was 1.1 × 10^-17 M. The successful detection of target miRNAs, isolated from real plasma samples of PC patients, has also been demonstrated. We believe that the development of highly sensitive nanotechnology-based biosensors for PC markers is a step towards personalized medicine.

Herein, a novel cavity design of racetrack integrated circular cavity established on metal-insulator-metal (MIM) waveguide is suggested for refractive index sensing application. Over the past few years, we have witnessed several unique cavity designs to improve the sensing performance of the plasmonic sensors created on the MIM waveguide. The optimized cavity design can provide the best sensing performance. In this work, we have numerically analyzed the device design by utilizing the finite element method (FEM). The small variations in the geometric parameter of the device can bring a significant shift in the sensitivity and FOM of the device. The best sensitivity and FOM of the anticipated device are 1400 nm/RIU and ~12.01, respectively. We believe that the sensor design analyzed in this work can be utilized in the on-chip detection of biochemical analytes.

In higher eukaryotes, enhancers determine the activation of developmental gene transcription in specific cell types and stages of embryogenesis. Enhancers transform the signals produced by various transcription factors within a given cell, activating the transcription of the targeted genes. Often, developmental genes can be associated with dozens of enhancers, some of which are located at large distances from the promoters that they regulate. Currently, the mechanisms that underly the specific distance interactions between enhancers and promoters remain unknown. This review describes the properties and activities of enhancers and discusses the mechanisms of distance interactions and potential proteins involved in this process.

We use a random gap model to describe a metal-insulator transition in three-dimensional semiconductors due to doping and find a conventional phase transition, where the effective scattering rate is the order parameter. Spontaneous symmetry breaking results in metallic behavior, whereas the insulating regime is characterized by the absence of spontaneous symmetry breaking. The transition is continuous for the average conductivity with critical exponent equal to 1. Away from the critical point the exponent is roughly 0.6, which may explain experimental observations of a crossover of the exponent from 1 to 0.5 by going away from the critical point.

Ultrathin Bi₂Se₃-NbN bilayers comprise a simple proximity system of a topological insulator and an s-wave superconductor for studying gating effects on topological superconductors. Here we report on 3 nm thick NbN layers of weakly connected superconducting islands, overlayed with 10 nm thick Bi₂Se₃ film which facilitates enhanced proximity coupling between them. Resistance versus temperature of the most resistive bilayers shows insulating behavior but with signs of superconductivity. We measured the magnetoresistance (MR) of these bilayers versus temperature with and without a magnetic field H normal to the wafer (MR=[R(H)-R(0)]/\{[R(H)+R(0)]/2\}), and under three electric gate-fields of 0 and ±2 MV/cm. The MR results showed a complex set of gate sensitive peaks which extended up to about 30 K. The results are discussed in terms of vortex physics, and the origin of the different MR peaks is identified and attributed to flux-flow MR in the isolated NbN islands and the different proximity regions in the Bi₂Se₃ cap-layer. The dominant MR peak was found to be consistent with enhanced proximity induced superconductivity in the topological edge currents regions. The high temperature MR data suggest a possible pseudogap phase or a highly extended fluctuation regime.

We study the coupling of two topologcal subsystems in distinct topological states, and show that it leads to a precursor behavior of the topological phase transition in the overall system. This behavior is solely determined by the symmetry classes of the subsystem Hamiltonians and coupling terms, and is marked by the persistent existence of subgap states within the bulk energy gap. By investigating the critical current of Josephson junctions involving topological superconductors, we also illustrate that such subgap states play crucial roles in physical properties of nanoscale devices or materials.

Using two metal insulated metal waveguides (MIM) and five resonator (a quadrilateral cavity and three rings with different dimensions), we design a plasmonic refractive index sensor. Using the time domain finite difference method, we examine and analyze the sensor performance (numerical analysis) and using the transmission line model method, we theoretically examine the performance of the sensor By summarizing these two methods and calculating the sensitivity coefficient S, quality coefficient Q and figure of merit (FOM), a plasmonic sensor with good performance is obtained. Using the supermods of the resonators, we will achieve a stable wavelength spectrum and a suitable and stable sensitivity coefficient spectrum. Challenges and changes that occur in different modes of this sensor will lead to a balanced and relatively good structure. This designed sensor can be useful in the development of integrated optical circuits.

In this paper, a plasmonic refractive index sensor based on metal insulated metal waveguide (MIM) with three rings and a resonant cavity is first proposed and numerically evaluated. Next, we add four teeth to the sensor structure. We study and simulate the resonant wavelengths and refractive index of resonators using the time difference finite difference method. Given that the sensor and the conduction characteristics of plasmonic waves are influenced by the structure parameters,Therefore, by changing the refractive index and changing the dimensions and coordinates of the cavity and rims, we can change the passage coefficient in the resonant modes and measure the sensor performance. As a result, we obtain the sensitivity coefficient, the figure of merit (FOM) and the quality factor Q of the sensor. We modulate the resonance wavelength FWHM using the generated modes and reach a sensitivity of 2166 nm / RIU. These plasmonic sensors with a simple framework and balanced performance and high optical resolution can be used to measure the refractive index in the medical, chemical and food industries.

In this study, we seek to analyze and numerically evaluate a plasmonic sensor. To form the sensor structure, we use several amplifiers, such as two rings attached to each other and a cavity, as well as two metal insulating metal waveguides (MIM). At the beginning of this simulation, we must examine the resonant wavelengths and the refractive index of the resonators using the finite difference time domain method. By changing the refractive index and changing the dimensions of the cavity and the rims, we seek to investigate the sensor performance and the conduction characteristics of the plasmonics and to obtain the effect of these parameters. To evaluate the sensor performance, we calculate the three factors of sensitivity coefficient S, quality factor Q and figure of merit (FOM), here we reach the sensitivity of 987.6 nm / RIU. Such a plasmonic sensor with a simple framework and high optical resolution can be very useful for sensor systems on optical circuits.

The apparent metal-insulator transition (MIT) in two-dimension (2D) was discovered by Kravchenko et al. [1] more than two decades ago in strongly interacting 2D electrons residing in a Si-metal-oxide-semiconductor field-effect transistor (Si-MOSFET). Its origin remains unresolved. Recently, low magnetic field reentrant insulating phases (RIPs), which dwell between the zero-field (B=0) metallic state and the integer quantum Hall (QH) states where the Landau-level filling factor υ > 1, have been observed in strongly correlated 2D GaAs hole systems with large interaction parameter rs (~20-40) and high purity. A new complex phase diagram was proposed, which includes zero field MIT, low magnetic field RIPs, integer QH states, fractional QH states, high field RIPs and insulating phases (HFIPs) with υ < 1 in which the insulating phases are explained by the formation of Wigner crystal. Furthermore, evidences of new intermediate phases were reported. All contribute to the further understandings of the puzzle. This review article serves the purpose of summarizing those recent experimental findings and theoretical endeavors, to foster future research efforts.

We review the latest developments in the field of the metal-insulator transition in strongly-correlated two-dimensional electron systems. Particular attention is given to recent discoveries of a sliding quantum electron solid and interaction-induced spectrum flattening at the Fermi level in high-quality silicon-based structures.

We report on comparison between temperature-dependent magneto¬absorption and magnetotransport spectroscopy of HgTe/CdHgTe quantum wells in terms of detection of phase transition between topological insulator and band insulator states. Our results demonstrate that temperature-dependent magnetospectroscopy is a powerful tool to discriminate trivial and topological insulator phases, yet magnetotransport method is shown to have advantages for clear manifestation of the phase transition with accurate quantitative values of transition parameter (i.e. critical magnetic field Bc).

Natural polluted insulator surfaces are always coated with various kinds of soluble constituents, and those constituents affect flashover performance differentially. Currently this fact is not considered either in laboratory experiments or field pollution degree measurements, causing the existing insulation selection method to be deficient. In this paper a systematical research on insulator flashover voltage gradient correction involving types of soluble pollution constituents was presented. Taking typical type glass insulator as the sample, its flashover tests polluted by typical soluble chemicals NaCl, NaNO₃, KNO₃, NH₄NO₃, MgSO₄, Ca(NO₃)₂ and CaSO₄ were carried out. Then the flashover gradient correction was made combining the flashover performance of each soluble constituent, the ESDD contribution of the seven constituents, as well as the saturation performance of CaSO₄. The correction was well verified with the flashover test results of insulator polluted by three types of soluble mixture. Research results indicate that the flashover gradient correction method proposed by this paper performs well in reducing the calculating error. It is recommended to carry out component measurements and flashover gradient correction to better select outdoor insulation configuration.

The primary distribution systems are comprised of power lines delivering power to utility feeders from substations. The inspection and maintenance of damaged and broken power system insulators are of paramount importance for continuous power supply and public safety. hence, to identify any faults and defects in advance a periodic inspection of power line insulators and other components be ensured beforehand. To automate the process and reduce operational cost and risk Unmanned Aerial Vehicles (UAVs) are being extensively utilized. As they present a safer and efficient way to examine the power system insulators and their components without closing the power distribution system ensuring continuous supply to the end-users. To achieve these objectives in this work a novel dataset is designed by capturing real images using UAVs and manually generated images collected to overcome the data insufficiency problem. Deep Laplacian pyramids based super-resolution network is implemented to reconstruct high-resolution training images. To improve the visibility of low light images a low light image enhancement technique is used for the robust exposure correction of the training images. Using computer vision-based object detection techniques to identify faults and classify them according to classes they belong. A different fine-tuning strategy is implemented for fine-tuning the object detection model to increase detection accuracy for the specific faulty insulators. To improve the faults detection several flight path strategies are proposed for efficient inspection. Such strategies overcome the shuttering effect of insulators along with providing a less complex, time, and energy-efficient approach for capturing video stream of the power system components. Performance of different object detection models is presented for selecting the suitable one for fine-tuning on the specific faulty insulator dataset. Our proposed approach gives a less complex and more efficient flight strategy along with better results. For defect detection, our proposed method achieved an F1-score of 0.81 and 0.77 on two different datasets. Our approach is based on real aerial inspection of in-service porcelain insulators by extensive evaluation of several video sequences showing robust faults recognition and diagnostic capabilities. Our approach is demonstrated on data acquired by a drone in Swat Pakistan.

This paper reports 2 × 4 hybrid Mach-zehnder interferometer (MZI) - multi-mode interferometers (MMI) based compact thermo-optical switch consisting of slab waveguides on silicon-on-insulator, SOI, platform. The device consists of two identical MMIs, each of 6 μm wide and 140 μm long connected with two phase shifters MMIs each with 2 μm wide and 8 μm long and linear tappers each 4 μm long, connected at both ends of the MMIs to minimize the power coupling loss. The loss for linear taper is found to be below 0.02dB. The footprint of the whole device is six 6 μm × 324 μm. This structure is based on unique multimode region shape, which leads optical switch to have less coupling loss and reduced cross-talk. The average thermo-optical switching power consumption is 1.4 mW, the excess losses are 0.8 dB, and the imbalances are 0.1 dB. Aluminum is used as a heating pad, and a trench is created around this pad to prevent from spreading of heat and reduce power loss almost by a factor of 2 to the adjacent phase shifter. Our new heating method has advantages of compact size and ease of fabrication with the current CMOS technology.

Highly-correlated electrons – electrons that engage in strong electron-electron interactions – have been observed in transition metal oxides and quantum dots and can create unusual material behavior that is difficult to model, such as switching between a low resistance metal state and a high resistance Mott insulator state. Tests of devices using a layer-by-layer deposition process for forming multilayer arrays of ferritin (a transition metal (iron) oxide storage protein) have been previously reported that indicate that highly-correlated electron transport is occurring, consistent with models of electron transport in quantum dots. This paper reports the results of the effect of various degrees of structural homogeneity on the electrical characteristics of these ferritin arrays, as well as demonstrating that these structures can provide a switching function associated with the circuit that they are contained within, consistent with the observed behavior of highly-correlated electrons.

In the paper the experimental methodology for the single-crystal circular plate deformation measurement and subsequent procedure for mechanical properties quantitation are developed. The procedure is based on a new numerical-analytical solution of nonlinear boundary-value problem for finite deformations of a circular anisotropic plate. Using the developed method, a study of the deformation of single-crystal circular plates formed on the basis of a silicon-on-insulator structure was carried out. The values of residual stresses are determined and it is shown that the presence of these stresses increases the flexural rigidity of the plate in several times.

Insulator defect detection is of great significance to compromise the stability of the power transmission line. The state-of-the-art network of object detection, YOLOv5, has been widely used on insulator and defect detection. However, YOLOv5 network has some limitations like poor detection rate and high computational loads in detecting small insulator defects. To solve these problems, we proposed a light-weight network for insulator and defect detection. In this network, we introduced Ghost module into YOLOv5 backbone and neck to reduce the parameters and model size to enhance the performance in unmanned aerial vehicles (UAVs). Besides, we added small object detection anchors and layers for small defect detection. In addition, we optimized the backbone of YOLOv5 by applying convolutional block attention module (CBAM) to focus on critical information for insulator and defect detection and suppress uncritical information. The experiment result shows the mean average precision (mAP) 0.5 and the mAP0.5:0.95 of our model can reach 99.4% and 91.7%, the parameters and model weight are reduced to 3807372 and 8.79M, which can easily deploy to embedded devices like UAVs. And the speed of detection can reach 10.9ms/image, which can meet the real-time detection requirement.

The composite post insulator composed of a large diameter mandrel and flange pressed by one-time integral pultrusion has high strength and good toughness, widely used in the existing flexible converter valve. For constructing the finite element model of the crimped post insulator, most of the flange surface and the mandrel surface are directly connected, making the simulation model's stiffness deviate from the actual model and the model distortion. Based on this, this study proposes a new finite element simplified model of crimped composite post insulator based on Multi-Point Constraints (MPC), which accurately simulates the crimping area of man-drel and flange in engineering practice. It verifies the model's reliability through static tests and characteristic vibration tests. The results show that the difference between the finite element simulation and test results is within 5 %. The finite element modeling method based on MPC local constraints is very reliable in applying crimped composite post insulators. Based on the proposed model, the influence of flange height and thickness on the mechanical properties of composite post-insulators is further explored. The results show that the influence of flange height on mechanical properties can be ignored when the height of the insulator stiff-ener ( non-press common area ) is constant. Within the allowable thickness range of the flange crimping process, the increase in flange thickness will significantly reduce the maximum bend-ing stress of the insulator and increase its safety margin. It provides a good design idea for the design of crimping composite insulators.

In this paper, we study the effect of parasitic channel on electrical characteristics and power consumptions of vertically stacked gate-all-around (GAA) silicon nanosheet (NS) MOSFETs of the bulk and silicon-on-insulator (SOI) substrates. Through deliberate control of the bottom parasitic channel coverage, we systematically assess its influence on DC, AC, and RF characteristics including power consumption. The observed findings highlight a significant differentiation among the bottom parasitic channels: GAA (i.e., control sample with 100% coverage), omega-shaped gate NS (70% and 80% coverages), and FinFET (60% coverage). Compared with the device with a 60% coverage channel, the device with a 100% coverage channel possesses 3520% and 8030% normalized leakage current improvement for both NFET and PFET under the bulk substrate, respectively. Compared with bulk-substrate devices, the SOI-substrate devices further significantly improve the leakage current. Due to enhanced off-state current leakages in the 100% covered bulk-substrate device, the static power demonstrates a notable improvement (about 98.1%), compared to 60% covered devices. Hence, the utilization of a 60% covered channel will result in a degradation of both device and circuit performance. The observation of GAA NS MOSFET indicates that an increase in the bottom parasitic channel coverage ratio leads to a positive impact on power consumption and leakage currents. The examination presented here is useful in the fabrication of stacked GAA NS MOSFETs.

We delve into the axion-dilaton model within the supergravity framework, with a specific focus on the intricacies of domain wall construction and stability. Employing holographic vitrification, we unravel the dynamics of domain wall formation in gauge theories featuring periodic vacuum structures. Our model, incorporating a QCD-like axion term and a stabilizing dilaton, undergoes scrutiny for conductivity variations under weak disorder. The investigation reveals the model's resilience, manifesting near-perfect conductivity under mild disorder conditions. However, the rigorous mathematical motivation for the holographic setup demands further elucidation. The scattered nature of our results prompts the necessity for a more systematic interpretation of QCD phenomena and conductivity transitions. This study contributes to the mathematical understanding of the axion-dilaton model's behavior, highlighting the imperative for a refined holographic framework and a more coherent interpretation of observed phenomena.