We report on the fabrication and electrical characteristics of zinc-oxide (ZnO) based metal-insulator-semiconductor (MIS) type Schottky barrier diodes (SBHs). ZnO thin layer on the p-type silicon substrate was fabricated by atomic layer deposition (ALD). The structure and surface properties of the thin film were characterized by X-ray diffraction (XRD), atomic force microscope (AFM) and secondary ion mass spectrometer (SIMS). The current-voltage (I-V) characteristics of Al/ALD-grown ZnO/p-Si diodes were measured under dark at room temperature. The electrical parameters such as ideality factor (n), series resistance (R_s) and barrier height (ϕ_b) of the diodes were analyzed using standard thermionic emission (TE) theory, Norde and Cheung method. The barrier height value obtained from I-V and Cheung method was found to be 0.73 eV and 0.76 eV, respectively. The interface state density (Dit) of the diodes was determined from the I-V characteristics. The nonideal behavior of measured parameters suggested the presence of interface states. The obtained results showed that the prepared diode can be used for NIR Schottky photodetector applications.

This paper presents a concise exploration of several analytical methods for extracting the parameters of the single-diode model (SDM) of a photovoltaic (PV) module under standard test conditions (STC). The paper investigates six methods and presents the detailed mathematical analysis leading to the development of each method. To evaluate the performance of these methods, MATLAB-based software has been developed and deployed to synthesize the results of each method when used to extract the SDM parameters of various PV test modules of different PV technologies. Similar software has also been developed to extract the same parameters using well-established numerical and iterative techniques. A comparison is subsequently made between the synthesized results and those obtained using numerical and iterative methods. The comparison indicates that in spite of the fact that analytical methods may involve fair amount of approximations, their accuracy can be comparable to that of their numerical and iterative counterparts, with the added advantage of significant reduction in computational complexity, and without the initialization and convergence difficulties, which are normally associated with numerical methods.